High-reliability discrete products
and engineering services since 1977
FEATURES
2N6504-2N6509
SILICON CONTROLLED RECTIFIERS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
2N6504
2N6505
2N6507
2N6508
2N6509
Symbol
Value
50
100
400
600
800
25
16
250
20
`0.5
2.0
-40 to +125
-40 to +150
Unit
Peak repetitive off state voltage
(1)
(Gate open, sine wave 50 to 60 Hz, T
J
= 25° to 125°C)
V
DRM
, V
RRM
V
On-state current RMS (180° conduction angles; T
C
= 85°C)
Average on-state current (180° conduction angles; T
C
= 85°C)
Peak non-repetitive surge current (1/2 cycle, sine wave 60 Hz, T
J
= 100°C
Forward peak gate power (pulse width ≤ 1.0 µs, T
C
= 85°C)
Forward average gate power (t = 8.3ms, T
C
= 85°C)
Forward peak gate current (pulse width ≤ 1.0 µs, T
C
= 85°C)
Operating junction temperature range
Storage temperature range
I
T(RMS)
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
A
A
A
W
W
A
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)
and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.
V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction-to-case
Maximum lead temperature for soldering purposes 1/8” in from case for 10 seconds
Symbol
R
θJC
T
L
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C)
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(V
AK
= rated V
DRM
or V
RRM
, gate open)
ON CHARACTERISTICS
Forward on-state voltage
(2)
(I
TM
= 50A)
Gate trigger current (continuous dc)
(V
AK
= 12Vdc, R
L
= 100Ω)
Gate trigger voltage (continuous dc)
(V
AK
= 12 Vdc, R
L
= 100Ω, T
C
= -40°C)
Gate non-trigger voltage
(V
AK
= 12Vdc, R
L
= 100Ω, T
J
= 125°C)
Holding current
(V
AK
= 12Vdc, initiating current = 200mA, gate open)
Turn-on time (I
TM
= 25A, I
GT
= 50mAdc)
T
C
= 25°C
T
C
= -40°C
T
C
= 25°C
T
C
= -40°C
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
-
-
-
-
0.2
-
-
-
-
9.0
-
1.0
-
18
-
1.5
1.8
30
75
1.5
-
40
80
2.0
V
mA
V
V
mA
µs
T
J
= 25°C
T
J
= 125°C
I
DRM
, I
RRM
-
-
-
-
10
2.0
µA
mA
Symbol
Min
Typ
Max
Unit
Rev. 20130116
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (T
C
= 25°C)
Characteristic
ON CHARACTERISTICS
Turn-off time (V
DRM
= rated voltage)
(I
TM
= 25A, I
R
= 25A)
(I
TM
= 25A, I
R
= 25A, T
J
= 125°C)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(Gate open, rated V
DRM
, exponential waveform)
2.
Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2N6504-2N6509
Symbol
SILICON CONTROLLED RECTIFIERS
Min
Typ
Max
Unit
t
q
-
-
15
35
-
-
µs
dv/dt
-
50
-
V/µs
MECHANICAL CHARACTERISTICS
Case:
Marking:
Pin out:
TO-220AB
Body painted, alpha-numeric
See below
Rev. 20130116
High-reliability discrete products
and engineering services since 1977
2N6504-2N6509
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
SILICON CONTROLLED RECTIFIERS
Peak repetitive off state forward voltage
Peak forward blocking current
Peak repetitive off state reverse voltage
Peak reverse blocking current
Peak on state voltage
Holding current
Average Current Derating
Maximum On-State Power Dissipation
Typical On-State Characteristics
Maximum Non-Repetitive Surge Current
Rev. 20130116
High-reliability discrete products
and engineering services since 1977
2N6504-2N6509
SILICON CONTROLLED RECTIFIERS
Thermal Response
Typical Gate Trigger Current vs. Junction Temperature
Typical Gate Trigger Voltage vs. Junction Temperature
Typical Holding Current vs. Junction Temperature
Rev. 20130116
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