2N5150.MODR1 datasheet, PDF - EEWORLD Datasheet

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2N5150.MODR1: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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2N5150.MODR1 Overview

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN

2N5150.MODR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

2N5150.MODR1 Related Products

	2N5150.MODR1	2N5150R1	2N5150.MOD	2N5150
Description	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
package instruction	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	80 V	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	70	70	70
JEDEC-95 code	TO-205AD	TO-205AD	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	60 MHz	60 MHz	60 MHz
Base Number Matches	1	1	1	1

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