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2N6372-JQR-AR1

Description
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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2N6372-JQR-AR1 Overview

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN

2N6372-JQR-AR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionHERMETIC SEALED, METAL, TO-66, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-213AA
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Base Number Matches1

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