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2SK4069-S15-AY

Description
Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, TO-251, MP-3-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size293KB,8 Pages
ManufacturerNEC Electronics
Environmental Compliance
Download Datasheet Parametric View All

2SK4069-S15-AY Overview

Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, TO-251, MP-3-B, 3 PIN

2SK4069-S15-AY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.021 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK4069-S15-AY
Note
Note
Note
PACKAGE
TO-251(MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
2SK4069-ZK-E1-AY
2SK4069-ZK-E2-AY
FEATURES
Low on-state resistance
R
DS(on)1
= 12 mΩ MAX. (V
GS
= 10 V, I
D
= 15 A)
Low Q
GD
: Q
GD
= 3.2 nC TYP.
4.5 V drive available
Note
Pb-free (This product does not contain Pb inexternal
electrode.)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
25
±20
±30
±120
21
1.0
150
−55
to +150
18
32.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Single Avalanche Energy
Note2
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 12 V, R
G
= 25
Ω,
V
GS
= 20
0 V, L = 100μH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18032EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2006
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