SILICON PNP TRANSISTOR
2N3637
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General Purpose PNP Silicon Transistor
High Voltage, High Speed Saturated Switching
Low Power Amplifier Applications
Hermetic TO39 Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Power Dissipation at
-175V
-175V
-5.0V
-1.0A
1.0W
5.71mW/°C
5.0W
28.6mW/°C
-65 to +200°C
-65 to +200°C
TA = 25°C
Derate Above 25°C
TC = 25°C
Derate Above 25°C
TJ
Tstg
Junction Temperature Range
Storage Temperature Range
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
175
35
Unit
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 3068
Issue 3
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PNP TRANSISTOR
2N3637
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
IEBO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Emitter Cut-Off Current
Test Conditions
IC = -10mA
VBE = -5.0V
VBE = -3.0V
VCB = -100V
IB = 0
IC = 0
IC = 0
IE = 0
TA = 150°C
VCB = -175V
IC = -0.10mA
IC = -1.0mA
IE = 0
VCE = -10V
VCE = -10V
VCE = -10V
VCE = -10V
TA = -55°C
IC = -150mA
VCE = -10V
IB = -1.0mA
IB = -5.0mA
IB = -1.0mA
IB = -5.0mA
Min.
-175
Typ.
Max.
Unit
V
-10
-50
-100
-10
-10
55
90
100
100
50
60
-0.3
-0.6
-0.8
-0.65
-0.9
300
µA
nA
ICBO
Collector Cut-Off Current
µA
hFE
(1)
DC Current Gain
IC = -10mA
IC = -50mA
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IC = -10mA
IC = -50mA
IC = -10mA
IC = -50mA
V
VBE(sat)
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = -30mA
f = 100MHz
Small-Signal Current Gain
IC = 10mA
f = 1.0KHz
VCB = -20V
f = 1.0MHz
Input Capacitance
Turn-On Time
Turn-Off Time
VEB = -1.0V
f = 1.0MHz
VCC = -100V
IC = -50mA
VBE = 4.0V
IB1 = -IB2 = -5mA
IC = 0
75
400
600
pF
IE = 0
VCE = 10V
80
320
VCE = -30V
100
MHz
hfe
Cobo
Output Capacitance
10
pF
Cibo
ton
toff
ns
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3068
Issue 3
Page 2 of 3
SILICON PNP TRANSISTOR
2N3637
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO39 (TO-205AD) METAL PACKAGE
Underside View
PIN 1 - Emitter
PIN 2 - Base
PIN 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3068
Issue 3
Page 3 of 3