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2N5599R1

Description
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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2N5599R1 Overview

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN

2N5599R1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionHERMETIC SEALED, METAL, TO-66, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-213AA
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1

2N5599R1 Related Products

2N5599R1 2N5599.MODR1 2N5599.MOD RVZ-6V470ME61UQ-R2
Description Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN FOR AUTOMOTIVE VERTICAL CHIP TYPE ALUMINUM ELECTROLYTIC CAPACITORS[RVZ]
Is it Rohs certified? conform to conform to incompatible -
package instruction HERMETIC SEALED, METAL, TO-66, 2 PIN FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 -
Reach Compliance Code compliant compliant compliant -
ECCN code EAR99 EAR99 EAR99 -
Shell connection COLLECTOR COLLECTOR COLLECTOR -
Maximum collector current (IC) 2 A 2 A 2 A -
Collector-emitter maximum voltage 80 V 80 V 80 V -
Configuration SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 30 30 30 -
JEDEC-95 code TO-213AA TO-213AA TO-213AA -
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 -
Number of components 1 1 1 -
Number of terminals 2 2 2 -
Package body material METAL METAL METAL -
Package shape ROUND ROUND ROUND -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP PNP -
Certification status Not Qualified Not Qualified Not Qualified -
surface mount NO NO NO -
Terminal form PIN/PEG PIN/PEG PIN/PEG -
Terminal location BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON SILICON SILICON -
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz -
Base Number Matches 1 1 1 -
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