Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | HERMETIC SEALED, METAL, TO-66, 2 PIN |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 2 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 30 |
JEDEC-95 code | TO-213AA |
JESD-30 code | O-MBFM-P2 |
JESD-609 code | e1 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN SILVER COPPER |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 50 MHz |
Base Number Matches | 1 |
2N5599R1 | 2N5599.MODR1 | 2N5599.MOD | RVZ-6V470ME61UQ-R2 | |
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Description | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | FOR AUTOMOTIVE VERTICAL CHIP TYPE ALUMINUM ELECTROLYTIC CAPACITORS[RVZ] |
Is it Rohs certified? | conform to | conform to | incompatible | - |
package instruction | HERMETIC SEALED, METAL, TO-66, 2 PIN | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | - |
Reach Compliance Code | compliant | compliant | compliant | - |
ECCN code | EAR99 | EAR99 | EAR99 | - |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | - |
Maximum collector current (IC) | 2 A | 2 A | 2 A | - |
Collector-emitter maximum voltage | 80 V | 80 V | 80 V | - |
Configuration | SINGLE | SINGLE | SINGLE | - |
Minimum DC current gain (hFE) | 30 | 30 | 30 | - |
JEDEC-95 code | TO-213AA | TO-213AA | TO-213AA | - |
JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | - |
Number of components | 1 | 1 | 1 | - |
Number of terminals | 2 | 2 | 2 | - |
Package body material | METAL | METAL | METAL | - |
Package shape | ROUND | ROUND | ROUND | - |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
Polarity/channel type | PNP | PNP | PNP | - |
Certification status | Not Qualified | Not Qualified | Not Qualified | - |
surface mount | NO | NO | NO | - |
Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | - |
Terminal location | BOTTOM | BOTTOM | BOTTOM | - |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
Transistor component materials | SILICON | SILICON | SILICON | - |
Nominal transition frequency (fT) | 50 MHz | 50 MHz | 50 MHz | - |
Base Number Matches | 1 | 1 | 1 | - |