2N5467.MOD datasheet, PDF - EEWORLD Datasheet

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2N5467.MOD: DescriptionPower Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N5467.MOD Overview

Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN

2N5467.MOD Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	2.5 MHz
Base Number Matches	1

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2N5467

Dimensions in mm (inches).

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

Bipolar NPN Device in a

Hermetically sealed TO39

Metal Package.

Bipolar NPN Device.

6.10 (0.240)

6.60 (0.260)

12.70

(0.500)

min.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

V

CEO

= 400V

5.08 (0.200)

typ.

I

C

= 3A

2.54

(0.100)

2

1

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

3

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

45°

TO39 (TO205AD)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

V

CEO

*

I

C(CONT)

h

FE

f

t

P

D

Test Conditions

Min.

Typ.

Max.

400

3

Units

V

A

-

Hz

W

@ (V

CE

/ I

C

)

2.5M

60

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

1-Aug-02

2N5467.MOD Related Products

	2N5467.MOD	2N5467
Description	Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN	Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN
package instruction	CYLINDRICAL, O-MBCY-W3	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	unknown	compliant
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	400 V	400 V
Configuration	SINGLE	SINGLE
JEDEC-95 code	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	2.5 MHz	2.5 MHz
Base Number Matches	1	1

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