2N6462 datasheet, PDF - EEWORLD Datasheet

2N6462: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N6462 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN

Parameter Name	Attribute value
package instruction	HERMETIC SEALED, METAL, TO-39, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

	2N6462	2N6462.MOD
Description	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
package instruction	HERMETIC SEALED, METAL, TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	300 V	300 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JEDEC-95 code	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
Base Number Matches	1	1

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