GP8NC60KD datasheet, PDF - EEWORLD Datasheet

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GP8NC60KD: Description15 A, 600 V, N-CHANNEL IGBT, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size537KB，18 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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GP8NC60KD Overview

15 A, 600 V, N-CHANNEL IGBT, TO-220AB

GP8NC60KD Parametric

Parameter Name	Attribute value
Number of terminals	3
Rated off time	242 ns
Maximum collector current	15 A
Maximum Collector-Emitter Voltage	600 V
Processing package description	ROHS COMPLIANT, TO-220, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	NOT SPECIFIED
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Number of components	1
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Channel type	N-CHANNEL
Transistor type	INSULATED GATE BIPOLAR
Rated on time	23 ns

GP8NC60KD Related Products

	GP8NC60KD	STGB8NC60KD	STGD8NC60KD	GF8NC60KD	GD8NC60KD	GB8NC60KD
Description	15 A, 600 V, N-CHANNEL IGBT, TO-220AB	15 A, 600 V, N-CHANNEL IGBT, TO-220AB	15 A, 600 V, N-CHANNEL IGBT, TO-220AB	15 A, 600 V, N-CHANNEL IGBT, TO-220AB	15 A, 600 V, N-CHANNEL IGBT, TO-220AB	15 A, 600 V, N-CHANNEL IGBT, TO-220AB
Number of terminals	3	2	2	3	3	3
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Number of components	1	1	1	1	1	1
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Rated off time	242 ns	-	-	242 ns	242 ns	242 ns
Maximum collector current	15 A	-	-	15 A	15 A	15 A
Maximum Collector-Emitter Voltage	600 V	-	-	600 V	600 V	600 V
Processing package description	ROHS COMPLIANT, TO-220, 3 PIN	-	-	ROHS COMPLIANT, TO-220, 3 PIN	ROHS COMPLIANT, TO-220, 3 PIN	ROHS COMPLIANT, TO-220, 3 PIN
Lead-free	Yes	-	-	Yes	Yes	Yes
EU RoHS regulations	Yes	-	-	Yes	Yes	Yes
state	ACTIVE	-	-	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	-	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
terminal coating	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Packaging Materials	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Channel type	N-CHANNEL	-	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Transistor type	INSULATED GATE BIPOLAR	-	-	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR
Rated on time	23 ns	-	-	23 ns	23 ns	23 ns

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