2SJ327-Z datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SJ327-Z

2SJ327-Z: DescriptionSmall Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, MP-3Z, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size2MB，6 Pages; ManufacturerNEC Electronics

Download Datasheet Parametric Compare View All

2SJ327-Z Overview

Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, MP-3Z, 3 PIN

2SJ327-Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	SC-63
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ327,327-Z

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

The 2SJ327 is P-channel MOS Field Effect Transistor designed for

solenoid, motor and lamp driver.

PACKAGE DRAWINGS (Unit: mm)

1.5

−0.1

+0.2

6.5 ±0.2

5.0 ±0.2

1.6 ±0.2

2.3 ±0.2

0.5 ±0.1

FEATURES

• Low On-state Resistance

DS(on)

= 0.13

TYP. (V

−10

V, I

−2.0

DS(on)

= 0.21

TYP. (V

−4

V, I

−1.6

• Low C

iss

: C

iss

= 750 pF TYP.

• Built-in G-S Gate Protection Diode

5.5 ±0.2

7.0 MIN.

13.7 MIN.

+0.2

1.1 ±0.2

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage

Gate to Source Voltage (AC)

Gate to Source Voltage (DC)

Drain Current (DC)

Drain Current (pulse)

Note

0.5

−0.1

0.5

−0.1

+0.2

DSS

GSS(AC)

GSS(DC)

D(DC)

D(pulse)

stg

−60

m20

−20,

+10

m4.0

m16

1.0

150

−55

to +150

2.3 2.3

0.75

<R>

TO-251 (MP-3)

5.0 ±0.2

4.4 ±0.2

5.5 ±0.2

1.5

−0.1

+0.2

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

°C

6.5 ±0.2

2.3 ±0.2

0.5 ±0.1

Note

1.0 ±0.5

0.4 MIN.

0.5 TYP.

2.5 ±0.5

Note

5.6 ±0.3

9.5 ±0.5

1 2 3

Note

≤

s, Duty Cycle

≤

0.5 ±0.1

2.3 ±0.3

0.15 ±0.15

EQUIVALENT CIRCUIT

TO-252 (MP-3Z)

Electrode Connection

1. Gate

2. Drain

3. Source

4. Drain Fin

Note

The depth of notch at the top of the fin is

from 0 to 0.2 mm.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18314EJ3V0DS00 (3rd edition)

Date Published January 2007 NS CP(K)

Printed in Japan

1993, 2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2SJ327-Z Related Products

	2SJ327-Z	2SJ327
Description	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, MP-3Z, 3 PIN	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, MP-3, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	4 A	4 A
Maximum drain-source on-resistance	0.17 Ω	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

Recommended Resources

Automatic battery current analyzer circuit diagram

Radial wiring power supply circuit b

Solid state relay circuit 2

Switching circuit TDA4919 and its application circuit 02

555 electronic touch game circuit

Long period pulse oscillation circuit composed of time base 555

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components