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2SK1824

Description
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, USM, MINIMOLD, SC-75, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size688KB,5 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK1824 Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, USM, MINIMOLD, SC-75, 3 PIN

2SK1824 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresESD PROTECTED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The 2SK1824 is a N-channel vertical type MOS FET that is driven at
2.5 V.
Because this MOS FET can be driven on a low voltage and because it
is not necessary to consider the drive current, the 2SK1824 is ideal for
driving the actuator of power-saving systems, such as VCR cameras
and headphone stereo systems.
Moreover, the 2SK1824 is housed in a super small mini-mold
package so that it can help increase the mounting density on the printed
circuit board and lower the mounting cost, contributing to miniaturization
of the application systems.
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
1.6 ± 0.1
0.8 ± 0.1
3
0 to 0.1
2
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
1
FEATURES
Small mounting area: about 60% of the conventional mini-mold
package (SC-70)
Can be automatically mounted
Can be directly driven by 3-V IC
1.0
1.6 ± 0.1
1: Source
2: Gate
3: Drain
ORDERING INFORMATION
PART NUMBER
2SK1824
PACKAGE
SC-75 (USM)
EQUIVALENT CIRCUIT
Drain
Marking: B1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
GSS
±7.0
Gate to Source Voltage (V
DS
= 0 V)
±100
Drain Current (DC)
I
D(DC)
Note1
Drain Current (pulse)
±200
I
D(pulse)
Note2
Total Power Dissipation
200
P
T
150
Channel Temperature
T
ch
−55
to +150
Storage Temperature
T
stg
Notes 1.
PW
10 ms, Duty Cycle
50%
2
2.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
V
V
mA
mA
mW
°C
°C
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D11220EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1996

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