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2N3209

Description
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,36 Pages
ManufacturerCrimson Semiconductor Inc.
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2N3209 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,

2N3209 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)0.2 A
Collector-based maximum capacity5 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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