7.4A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Parts packaging code | LCC |
package instruction | CHIP CARRIER, R-CQCC-N18 |
Contacts | 18 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 7.4 A |
Maximum drain-source on-resistance | 0.18 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CQCC-N18 |
Number of components | 1 |
Number of terminals | 18 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 30 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | QUAD |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Base Number Matches | 1 |