HM62W8512BLRR-5UL datasheet, PDF

HM62W8512BLRR-5UL: Description4 M SRAM (512-kword ⅴ 8-bit); Categorystorage storage; File Size109KB，18 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HM62W8512BLRR-5UL Overview

4 M SRAM (512-kword ⅴ 8-bit)

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	TSOP2
package instruction	0.400 INCH, PLASTIC, REVERSE, TSOP2-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	20.95 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature	-20 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Minimum standby current	2 V
Maximum slew rate	0.045 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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