IS61NLP102436A/IS61NVP102436A
IS61NLP204818A/IS61NVP204818A
1Mb x 36 and 2Mb x 18
36Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
•
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin TQFP package
• Power supply:
NVP: V
DD
2.5V (± 5%), V
DDQ
2.5V (± 5%)
NLP: V
DD
3.3V (± 5%), V
DDQ
3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available
FEBRUARY 2012
DESCRIPTION
The 36 Meg 'NLP/NVP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 1M words by 36 bits and 2M words by 18 bits,
fabricated with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE
is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when
WE
is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-200
3.1
5
200
-166
3.5
6
166
Units
ns
ns
MHz
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure
of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. B
02/02/2012
1
IS61NLP102436A/IS61NVP102436A
IS61NLP204818A/IS61NVP204818A
PIN CONFIGURATION
100-Pin TQFP
BWd
BWc
BWb
BWa
CKE
ADV
A
CLK
WE
CE2
CE2
V
DD
Vss
OE
CE
NC
BWb
BWa
CKE
ADV
A
CE2
CE2
V
DD
Vss
CLK
WE
A
A
A
A
A
OE
NC
CE
A
A
A
DQPc
DQc
DQc
V
DDQ
Vss
DQc
DQc
DQc
DQc
Vss
V
DDQ
DQc
DQc
VDD
V
DD
NC
Vss
DQd
DQd
V
DDQ
Vss
DQd
DQd
DQd
DQd
Vss
V
DDQ
DQd
DQd
DQPd
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
V
DD
NC
A
A
A
A
A
A
MODE
A
A
A
A
NC
NC
A1
A0
Vss
A
A
DQPb
DQb
DQb
V
DDQ
Vss
DQb
DQb
DQb
DQb
Vss
V
DDQ
DQb
DQb
Vss
NC
V
DD
ZZ
DQa
DQa
V
DDQ
Vss
DQa
DQa
DQa
DQa
Vss
V
DDQ
DQa
DQa
DQPa
NC
NC
NC
V
DDQ
Vss
NC
NC
DQb
DQb
Vss
V
DDQ
DQb
DQb
VDD
V
DD
NC
Vss
DQb
DQb
V
DDQ
Vss
DQb
DQb
DQPb
NC
Vss
V
DDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
MODE
Vss
NC
NC
NC
A
A
A1
A0
A
A
A
A
A
A
A
A
V
DD
A
A
A
A
A
NC
NC
V
DDQ
Vss
NC
DQPa
DQa
DQa
Vss
V
DDQ
DQa
DQa
Vss
NC
V
DD
ZZ
DQa
DQa
V
DDQ
Vss
DQa
DQa
NC
NC
Vss
V
DDQ
NC
NC
NC
1M x 36
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Clock
Synchronous Burst Address Advance
Synchronous Byte Write Enable
Write Enable
Clock Enable
Ground for Core
Not Connected
2M x 18
CE,
CE2,
CE2
Synchronous Chip Enable
OE
DQa-DQd
DQPa-DQPd
MODE
V
DD
V
SS
V
DDQ
ZZ
Output Enable
Synchronous Data Input/Output
Parity Data I/O
Burst Sequence Selection
+3.3V/2.5V Power Supply
Ground for output Buffer
Isolated Output Buffer Supply: +3.3V/2.5V
Snooze Enable
A
CLK
ADV
BWa-BWd
WE
CKE
Vss
NC
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
02/02/2012
3
Industrial Control Electronics
京公网安备 11010802033920号
EEWORLD
