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1N4148DCSM-JQR-BG4

Description
Rectifier Diode, 2 Element, 0.225A, 75V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, LCC2-6
CategoryDiscrete semiconductor    diode   
File Size21KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

1N4148DCSM-JQR-BG4 Overview

Rectifier Diode, 2 Element, 0.225A, 75V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, LCC2-6

1N4148DCSM-JQR-BG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionHERMETIC SEALED, CERAMIC, LCC2-6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CDSO-N6
JESD-609 codee4
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Maximum output current0.225 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N4148CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
2.54 ± 0.13
(0.10 ± 0.005)
3
SILICON EPITAXIAL
PLANAR DIODE
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.76 ± 0.15
(0.03 ± 0.006)
0.31 rad.
(0.012)
A
1.40
(0.055)
max.
Fast Switching Diode in
Hermetic Ceramic Surface Mount Package
For High Reliability Applications
1.02 ± 0.10
(0.04 ± 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 2 — Not Connected
PAD 1 — Anode
PAD 3 — Cathode
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Parameter
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
P
tot
Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Power Dissipation at T
amb
= 25 °C
t = 1
m
s
t = 1s
Test Conditions
Min.
Typ.
Max.
75
75
150
200
450
2000
500
500
Unit
V
V
mA
mA
mA
mA
mW
T
stg
Tj
Storage Temperature Range
Max junction temperature
-55 to +175 °C
+150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00

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