1N950D datasheet, PDF - EEWORLD Datasheet

1N950D: DescriptionVariable Capacitance Diode, 35pF C(T), 150V, Silicon, DO-7, 2 PIN; CategoryDiscrete semiconductor diode; File Size53KB，1 Pages; ManufacturerCobham PLC

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1N950D Overview

Variable Capacitance Diode, 35pF C(T), 150V, Silicon, DO-7, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DO-7
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	150 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	1%
Minimum diode capacitance ratio	14.6667
Nominal diode capacitance	35 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	7
Maximum repetitive peak reverse voltage	130 V
Maximum reverse current	0.000001 µA
Reverse test voltage	130 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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