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1N3999

Description
Zener Diode, 6.8V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4
CategoryDiscrete semiconductor    diode   
File Size76KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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1N3999 Overview

Zener Diode, 6.8V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4

1N3999 Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance1.2 Ω
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum knee impedance500 Ω
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
polarityUNIDIRECTIONAL
Maximum power dissipation10 W
Certification statusNot Qualified
Nominal reference voltage6.8 V
Maximum reverse current10 µA
surface mountNO
technologyZENER
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum voltage tolerance10%
Working test current370 mA
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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