The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 4 February 2004.
P.O.C. Roger Kissel, PH 614-692-0517
E-mail: Roger.Kissel@dla.mil
INCH POUND
MIL-PRF-19500/118F
4 November 2003
SUPERSEDING
MIL-PRF-19500/118E
23 April 1997
PERFORMANCE SPECIFICATION
* SEMICONDUCTOR DEVICE, DIODE, SILICON,
TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N5195US,
1N5196, 1N5196UR, AND 1N5196US, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon diodes. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, figure 2 (DO-213AA), and figure 3 (see 3.4).
* 1.3 Maximum ratings.
Type (1)
VRM
VRWM
IO
(2)
mA
200
200
200
IO
T
A
=
150°C
mA
50
50
50
IFSM
t
p
= 1/120 s
T
A
= 25°C
A
2
2
2
TJ and
TSTG
°C
-65 to +175
-65 to +175
-65 to +175
V (pk)
1N483B, 1N5194, 1N5194UR, 1N5194US
1N485B, 1N5195, 1N5195UR, 1N5195US
1N486B, 1N5196, 1N5196UR, 1N5196US
80
180
250
V (pk)
70
180
225
(1) The electrical characteristics for UR and US suffix devices are identical to their corresponding leaded
devices unless otherwise noted (applies only to the 1N5194, 1N5195, and 1N5196).
(2) Derate 1.2 mA/°C between 25°C and 150°C. Derate 2 mA/°C between 150°C and 175°C.
1.4 Primary electrical characteristics at T
A
= +25°C, unless otherwise indicated.
Type (1)
VF1
V dc
1.0
1.0
1.0
IR1 at VRWM
nA dc
25
25
25
IR3 at VRWM
TA = 150°C
µA
dc
5
5
5
1N483B, 1N5194, 1N5194UR, 1N5194US
1N485B, 1N5195, 1N5195UR, 1N5195US
1N486B, 1N5196, 1N5196UR,1N5196US
(1) The electrical characteristics for UR and US suffix devices are identical to their corresponding leaded
devices unless otherwise noted (applies only to the 1N5194, 1N5195, and 1N5196).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/118F
LD
LL1
Type
Symbol
1N483B
1N485B
1N486B
BD
BL
LD
LL
BD
BD1
BL
BL1
LD
LL
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.085
.125
2.16
3.18
.230
.300
5.84
7.62
.018
.022
0.46
0.56
1.00 1.500 25.40 38.10
.056
.030
.120
.075
.019
1.00
.094
.180
.021
1.500
1.42
0.76
3.05
1.91
0.48
25.40
2.39
4.57
0.53
38.10
Notes
3
2, 5
4, 5
1N5194
1N5195
1N5196
2, 5
4, 5
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general information only.
2. The specified lead diameter applies in the zone between .050 (1.27 mm) and 1.00 inch (25.4 mm) from the
diode body. Outside this zone the lead diameter is not controlled.
3. The minimum body diameter shall be maintained over .15 inch (3.81 mm) of body length.
4. The leads shall be electrically insulated from the case.
5. Both leads.
6. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 1. Physical dimensions.
2
MIL-PRF-19500/118F
DO-213AA
Symbol
BD
BL
ECT
S
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.063 .067
1.60
1.70
.130 .146
3.30
3.70
.016 .022
0.41
0.55
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimensions are pre-solder dip.
4. Cathode marking to be either a color band or four dots spaced 90 degrees apart.
5. Minimum clearance of glass body to mounting surface on all orientations.
6. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 2. Physical dimensions 1N5194UR, 1N5195UR, and 1N5196UR (DO-213AA).
3
MIL-PRF-19500/118F
Symbol
BD
BL
ECT
S
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.091 .103
2.31
2.62
.168 .200
4.27
5.08
.019 .028
0.48
0.71
.003 Min
0.08 Min
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all orientations.
5. Cathode marking to be either a color band or four dots spaced 90 degrees apart.
6. In accordance with ASME Y14.5M, diameters are equivalent to
Φ
symbology.
FIGURE 3. Physical dimensions 1N5194US, 1N5195US, and 1N5196US.
4
MIL-PRF-19500/118F
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
-
Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
* (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface requirements and dimensions shall be as specified in
MIL-PRF-19500, and figures 1, 2, and 3 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
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