Philips Semiconductors Linear Products
Product specification
Dual operational transconductance amplifier
NE5517/5517A
DESCRIPTION
The NE5517 contains two current-controlled transconductance
amplifiers, each with a differential input and push-pull output. The
NE5517 offers significant design and performance advantages over
similar devices for all types of programmable gain applications.
Circuit performance is enhanced through the use of linearizing
diodes at the inputs which enable a 10dB signal-to-noise
improvement referenced to 0.5% THD. The NE5517 is suited for a
wide variety of industrial and consumer applications and is
recommended as the preferred circuit in the Dolby* HX (Headroom
Extension) system.
Constant impedance buffers on the chip allow general use of the
NE5517. These buffers are made of Darlington transistor and a
biasing network which changes bias current in dependence of I
ABC
.
Therefore, changes of output offset voltages are almost eliminated.
This is an advantage of the NE5517 compared to LM13600. With
the LM13600, a burst in the bias current I
ABC
guides to an audible
offset voltage change at the output. With the constant impedance
buffers of the NE5517 this effect can be avoided and makes this
circuit preferable for high quality audio applications.
PIN CONFIGURATION
N, D Packages
I
ABCa
1
D
a
2
+IN
a
3
-IN
a
4
VO
a
5
V- 6
INBUFFER
a
7
VO
BUFFERa
8
16
15
14
13
12
11
10
9
I
ABCb
D
b
+IN
b
-IN
b
VO
b
V+
IN
BUFFERb
VO
BUFFERb
Top View
APPLICATIONS
FEATURES
•
Constant impedance buffers
•
∆VBE
of buffer is constant with amplifier IBIAS change
•
Pin compatible with LM13600
•
Excellent matching between amplifiers
•
Linearizing diodes
•
High output signal-to-noise ratio
PIN DESIGNATION
PIN NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SYMBOL
I
ABC
D
+IN
-IN
V
O
V-
IN
BUFFER
VO
BUFFER
VO
BUFFER
IN
BUFFER
V+
V
O
-IN
+IN
D
I
ABC
•
Multiplexers
•
Timers
•
Electronic music synthesizers
•
Dolby™ HX Systems
•
Current-controlled amplifiers, filters
•
Current-controlled oscillators, impedances
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
NAME AND FUNCTION
Amplifier bias input A
Diode bias A
Non-inverting input A
Inverting input A
Output A
Negative supply
Buffer input A
Buffer output A
Buffer output B
Buffer input B
Positive supply
Output B
Inverting input B
Non-inverting input B
Diode bias B
Amplifier bias input B
August 31, 1994
92
853-0887 13721
Philips Semiconductors Linear Products
Product specification
Dual operational transconductance amplifier
NE5517/5517A
CIRCUIT SCHEMATIC
V+
11
D4
Q6
D6
Q14
Q10
Q12
7,10
Q13
8,9
Q7
Q11
2,15
D2
–INPUT
4,13
1,16
AMP BIAS
INPUT
Q4
Q5
D3
+INPUT
3,14
VOUTPUT
5,12
Q15
Q2
Q9
R1
Q1
D1
D5
Q8
Q16
D7
Q3
D8
V–
6
CONNECTION DIAGRAM
B
AMP
BIAS
INPUT
16
B
DIODE
BIAS
15
B
INPUT
(+)
14
B
INPUT
(–)
13
B
BUFFER
INPUT
10
B
BUFFER
OUTPUT
9
B
OUTPUT
12
V+ (1)
11
–
B
+
+
A
–
1
AMP
BIAS
INPUT
A
2
DIODE
BIAS
A
3
INPUT
(+)
A
4
INPUT
(–)
A
5
OUTPUT
A
6
V–
7
BUFFER
INPUT
A
8
BUFFER
OUTPUT
A
NOTE:
1. V+ of output buffers and amplifiers are internally connected.
August 31, 1994
93
Philips Semiconductors Linear Products
Product specification
Dual operational transconductance amplifier
NE5517/5517A
ORDERING INFORMATION
DESCRIPTION
16-Pin Plastic Dual In-Line Package (DIP)
16-Pin Plastic Dual In-Line Package (DIP)
16-Pin Small Outline (SO) Package
TEMPERATURE RANGE
0 to +70°C
0 to +70°C
0 to +70°C
ORDER CODE
NE5517N
NE5517AN
NE5517D
DWG #
0406C
0406C
0005D
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
S
Supply
voltage
1
36 V
DC
or
±18
44 V
DC
or
±22
V
V
NE5517
NE5517A
P
D
Power dissipation,
T
A
=25°C (still air)
2
NE5517N, NE5517AN
NE5517D
V
IN
I
D
I
ABC
I
SC
I
OUT
T
A
V
DC
T
STG
T
SOLD
Differential input voltage
Diode bias current
Amplifier bias current
Output short-circuit duration
Buffer output
current
3
Operating temperature range
NE5517N, NE5517AN
DC input voltage
Storage temperature range
Lead soldering temperature (10sec max)
0°C to +70
+V
S
to -V
S
-65°C to +150°C
300
°C
°C
°C
1500
1125
±5
2
2
Indefinite
20
mA
mW
mW
V
mA
mA
PARAMETER
RATING
UNIT
NOTES:
1. For selections to a supply voltage above
±22V,
contact factory
2. The following derating factors should be applied above 25°C
N package at 12.0mW/°C
D package at 9.0mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
DC ELECTRICAL CHARACTERISTICS
1
SYMBOL
PARAMETER
TEST CONDITIONS
NE5517
Min
Typ
0.4
V
OS
Input offset voltage
∆V
OS
/∆T
V
OS
including diodes
V
OS
I
OS
Input offset change
Input offset current
∆I
OS
/∆T
I
BIAS
Input bias current
∆I
B
/∆T
g
M
Forward transconductance
g
M
tracking
I
OUT
Peak output current
R
L
=0, I
ABC
=5µA
R
L
=0, I
ABC
=500µA
R
L
=0,
350
300
Avg. TC of input offset current
Over temperature range
Avg. TC of input current
Over temperature range
6700
5400
Over temperature range
I
ABC
5µA
Avg. TC of input offset voltage
Diode bias current (I
D
)=500µA
5µA
≤
I
ABC
≤
500µA
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
0.3
5
500
650
3
350
300
13000
7700
4000
5
8
0.6
5
5
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
0.3
5
500
7
650
12000
5
7
2
3
0.6
Max
5
Min
NE5517A
Typ
0.4
Max
2
5
2
UNIT
mV
mV
mV
µV/°C
mV
mV
µA
µA/°C
µA
µA
µA/°C
µmho
µmho
dB
µA
µA
µA
August 31, 1994
94
Philips Semiconductors Linear Products
Product specification
Dual operational transconductance amplifier
NE5517/5517A
DC ELECTRICAL CHARACTERISTICS
1
(continued)
SYMBOL
V
OUT
PARAMETER
Peak output voltage
Positive
Negative
I
CC
Supply current
V
OS
sensitivity
Positive
Negative
CMRR
Common-mode rejection
ration
Common-mode range
Crosstalk
I
IN
R
IN
B
W
SR
IN
BUFFER
VO-
BUFFER
TEST CONDITIONS
NE5517
Min
+12
-12
Typ
+14.2
-14.4
2.6
20
20
80
±12
110
±13.5
100
0.02
0.2
10
26
2
50
0.4
10
0.5
5
5
10
100
100
10
4
150
150
80
±12
Max
Min
+12
-12
NE5517A
Typ
+14.2
-14.4
2.6
20
20
110
±13.5
100
0.02
0.2
26
2
50
0.4
5
10
5
4
150
150
Max
UNIT
R
L
=∞, 5µA≤I
ABC
≤500µA
R
L
=∞, 5µA≤I
ABC
≤500µA
I
ABC
=500µA, both channels
∆
V
OS
/∆ V+
∆
V
OS
/∆ V-
V
V
mA
µV/V
µV/V
dB
V
dB
nA
nA
kΩ
MHz
V/µs
µA
V
Referred to
20Hz<f<20kHz
input
2
Differential input current
Leakage current
Input resistance
Open-loop bandwidth
Slew rate
Buff. input current
Peak buffer output voltage
∆V
BE
of buffer
I
ABC
=0, input=±4V
I
ABC
=0 (Refer to test circuit)
Unity gain compensated
5
5
Refer to Buffer V
BE
test
3
circuit
0.5
5
mV
NOTES:
1. These specifications apply for V
S
=±15V, T
A
=25°C, amplifier bias current (I
ABC
)=500µA, Pins 2 and 15 open unless otherwise specified. The
inputs to the buffers are grounded and outputs are open.
2. These specifications apply for V
S
=±15V, I
ABC
=500µA, R
OUT
=5kΩ connected from the buffer output to -V
S
and the input of the buffer is
connected to the transconductance amplifier output.
3. V
S
=±15, R
OUT
=5kΩ connected from Buffer output to -V
S
and 5µA
≤I
ABC
≤500µA.
August 31, 1994
95
Philips Semiconductors Linear Products
Product specification
Dual operational transconductance amplifier
NE5517/5517A
TYPICAL PERFORMANCE CHARACTERISTICS
Input Offset Voltage
5
4
INPUT OFFSET VOLTAGE (mV)
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
.1µA 1µA
10µA
100µA
1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
0.1
.1µA 1µA
10µA
100µA
1000µA
1
+25°C
+125°C
-55°C
INPUT OFFSET CURRENT (nA)
V
S
=
±15V
+125°C
10 3
Input Bias Current
V
S
=
±15V
10 4
Input Bias Current
V
S
=
±15V
10
2
-55°C
INPUT BIAS CURRENT (nA)
10
3
10
+25°C
+125°C
10
2
-55°C
10
+125°C
+25°C
.1µA 1µA
10µA
100µA
1000µA
1
AMPLIFIER BIAS CURRENT (I
ABC
)
AMPLIFIER BIAS CURRENT (I
ABC
)
10 4
PEAK OUTPUT CURRENT (
µ
A)
Peak Output Current
5
V
S
=
±15V
+125°C
PEAK OUTPUT VOLTAGE AND
COMMON-MODE RANGE (V)
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
Peak Output Voltage and
Common-Mode Range
V
OUT
LEAKAGE CURRENT (pA)
V
CMR
V
S
=
±15V
T
A
= 25°C
V
CMR
10 5
Leakage Current
(+)V
IN
= (–)V
IN
= V
OUT
= 36V
10 3
+25°C
-55°C
10 4
RLOAD =
∞
10 2
10 3
0V
10 2
10
V
OUT
10
-50°C -25°C
1
.1µA 1µA
10µA
100µA
1000µA
.1µA 1µA
10µA
100µA
1000µA
0°C 25°C 50°C 75°C100°C125°C
AMPLIFIER BIAS CURRENT (I
ABC
)
AMPLIFIER BIAS CURRENT (I
ABC
)
AMBIENT TEMPERATURE (T
A
)
Input Leakage
TRANSCONDUCTANCE (gM) — (
µ
ohm)
10 4
INPUT LEAKAGE CURRENT (pA)
+125°C
10 3
10 5
gM
10 4
Transconductance
mq
m
M
PINS 2, 15
OPEN
V
S
=
±15V
10 2
INPUT RESISTANCE (MEG
Ω
)
Input Resistance
PINS 2, 15
OPEN
10
1
10 2
+25°C
10
10 3
-55°C
10 2
+25°C
10
+125°C
1
.1
1
0
1
2
3
4
5
6
INPUT DIFFERENTIAL VOLTAGE
7
.1µA 1µA
10µA
100µA
1000µA
.01
.1µA 1µA
10µA
100µA
1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
AMPLIFIER BIAS CURRENT (I
ABC
)
August 31, 1994
96
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