AOD484
30V N-Channel MOSFET
General Description
The AOD484 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
= 25 A (V
GS
= 10V)
R
DS(ON)
< 15 mΩ (V
GS
= 10V)
R
DS(ON)
< 23 mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
D
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
G
Current
Pulsed Drain Current
Avalanche Current
C
C
Maximum
30
±20
25
20
80
15
33
50
25
2.1
1.3
-55 to 175
Units
V
V
A
A
mJ
W
W
°
C
V
GS
T
C
=25°
C
T
C
=100°
C
C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
C
=25°
C
Power Dissipation
B
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
55
2.3
Max
25
60
3
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD484
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250uA, V
GS
=0V
V
DS
=24V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=15A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
C
T
J
=125°
1
80
12.1
19
18.5
26
0.71
1
21
938
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
142
99
1.2
17.5
V
GS
=10V, V
DS
=15V, I
D
=20A
8.4
3
4.1
5
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=100A/µs
12
19
6
19
10
21
12
1.8
21
1220
23
15
1.5
Min
30
1
5
±100
2.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150° The value in any given application depends
C.
25
on the user's specific board design, and the maximum temperature of 175° may be used if the PCB allow s it.
C
B. The power dissipation P
D
is based on T
J(MAX)
=175° using junction-to-case thermal resistance, and is more useful in setting the upper
C,
25
dissipation limit for cases where additional heatsinking is used.
C.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
60
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
30
a maximum junction temperature of T
J(MAX)
=175°
C.
2.5
G. The maximum current is limited by package.
1.6
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev5: Aug. 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
6V
50
I
D
(A)
I
D
(A)
40
30
20
V
GS
=3V
10
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
25
20
R
DS(ON)
(m
Ω
)
15
10
5
0
0
4
8
12
16
20
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=4.5V
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
V
GS
=4.5V
I
D
=15A
V
GS
=10V
I
D
=20A
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
3.5V
5
10
125°C
25°C
-40°C
10V
8V
V
DS
=5V
4.5V
15
20
500
150
60
V
GS
=10V
40
I
D
=20A
35
30
R
DS(ON)
(m
Ω
)
25
20
15
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-40°C
125°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
V
DS
=20V
I
D
=20A
Capacitance (pF)
1200
C
iss
1000
800
600
C
oss
400
200
0
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000.0
R
DS(ON)
limited
100.0
I
D
(Amps)
10µs
Power (W)
120
80
40
0
0.0001
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
1
100µs
DC
1.0
T
J(Max)
=175°C, T
C
=25°C
1ms
10ms
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
8
V
GS
(Volts)
6
4
2
200
160
500
150
60
T
J(Max)
=175°C
T
C
=25°C
10.0
0.1
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
I
D
(A), Peak Avalanche Current
35
30
25
20
15
10
5
0
0.000001
0
0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
T
A
=150°C
40
t
A
=
Power Dissipation (W)
L
⋅
I
D
BV
−
V
DD
T
A
=25°C
30
20
10
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
30
25
Current rating I
D
(A)
40
500
150
60
T
A
=25°C
30
Power (W)
20
15
10
10
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
0
0.001
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
P
D
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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