WS1M32-XG3X
1Mx32 SRAM MODULE
FEATURES
Access Times of 17, 20, 25ns
Packaging
• 84 lead, 28mm CQFP, (Package 511)
Organized as two banks of 512Kx32, User Configurable as
2Mx16 or 4Mx8
Commercial, Industrial and Military Temperature Ranges
TTL Compatible Inputs and Outputs
5V Power Supply
Low Power CMOS
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
Weight
• WS1M32-XG3X - 20 grams (typical)
This product is subject to change without notice.
PIN CONFIGURATION FOR WS1M32-XG3X
TOP VIEW
GND
I/O
31
I/O
30
I/O
29
I/O
28
I/O
27
I/O
26
I/O
25
I/O
24
NC
NC
NC
I/O
23
I/O
22
I/O
21
I/O
20
I/O
19
I/O
18
I/O
17
I/O
16
V
CC
PIN DESCRIPTION
I/O0-31
A0-18
WE#1-4
CS#1-2
OE#1-4
VCC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enables
Power Supply
Ground
Not Connected
11
10
9
8 7 6 5 4 3 2 1 84 83 82 81 80 79 78 77 76 75
V
CC
A0
A1
A2
A3
A4
A5
A6
OE#1
OE#2
OE#3
OE#4
NC
A7
A8
A9
A10
A11
A12
A13
GND
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34 35 36
37
38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
GND
NC
NC
NC
NC
NC
NC
NC
NC
WE#
4
WE#
3
WE#
2
WE#
1
NC
NC
A
18
A
17
A
16
A
15
A
14
V
CC
BLOCK DIAGRAM
OE#1 WE#1
OE#2 WE#2
OE#3 WE#3
OE#4 WE#4
CS#1
A0-18
2M
8
512K x
x
8
512K x 8
2M
8
512K x
x
8
512K x 8
2M
8
512K x
x
8
2M
x
8
512K
x
8
512K x 8
512K x 8
V
CC
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CS#
1
NC
CS#
2
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
GND
8
CS#2
I/O0-7
8
8
8
I/O8-15
I/O16-23
I/O24-31
NOTE: CS#
1
& CS#
2
are used as bank select
The MICROSEMI 84 lead G3 CQFP
fi
lls the same
fi
t and function as the JEDEC 84 lead CQFJ or 84
PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form.
29.11 (1.146)
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011
Rev. 7
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
WS1M32-XG3X
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
-0.5
Min
-55
-65
-0.5
Max
+125
+150
V
CC
+ 0.5
150
7.0
Unit
°C
°C
V
°C
V
Parameter
OE#1-4 capacitance
WE#1-4 capacitance
CS#1-2 capacitance
Data I/O capacitance
Address input capacitance
CAPACITANCE
(T
A
= +25°C)
Symbol
COE
CWE
CCS
CI/O
CAD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
VI/O = 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
30
30
30
30
75
Unit
pF
pF
pF
pF
pF
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Operating Temp (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.2
-0.5
-55
-40
Max
5.5
V
CC
+ 0.3
+0.8
+125
+85
Unit
V
V
V
°C
°C
CS#1
H
L
L
L
H
H
H
L
CS#2
H
H
H
H
L
L
L
L
OE#
X
L
H
X
L
H
X
X
TRUTH TABLE
WE#
X
H
H
L
H
H
L
X
Mode
Standby
Read
Out Disable
Write
Read
Out Disable
Write
Invalid State
Data I/O
High Z
Data Out
High Z
Data In
Data Out
High Z
Data In
Invalid State
Power
Standby
Active
Active
Active
Active
Active
Active
Invalid State
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Symbol
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
2.4
Min
Max
10
10
720
120
0.4
Units
μA
μA
mA
mA
V
V
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011
Rev. 7
© 2011 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
WS1M32-XG3X
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
-17
Min
17
17
0
17
10
2
0
12
12
2
0
0
Max
Min
20
-20
Max
20
0
20
10
2
0
12
12
Min
25
-25
Max
25
25
12
Units
ns
ns
ns
ns
ns
ns
ns
t
OLZ
1
t
CHZ
1
1
12
12
ns
ns
t
OHZ
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1.This parameter is guaranteed by design but not tested.
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
1
-17
Min
17
15
15
11
15
2
0
2
9
0
0
Max
Min
20
15
15
12
15
2
0
3
-20
Max
Min
25
17
17
13
17
2
0
4
11
0
-25
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
t
WHZ
t
DH
13
ns
ns
AC TEST CIRCUIT
Parameter
Input Pulse Levels
Input Rise and Fall
AC TEST CONDITIONS
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Input and Output Reference Level
I
OL
Current Source
Output Timing Reference Level
NOTES:
VZ is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
D.U.T.
C
eff
= 50 pf
V
Z
1.5V
(Bipolar Supply)
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011
Rev. 7
© 2011 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
WS1M32-XG3X
TIMING WAVEFORM – READ CYCLE
t
RC
ADDRESS
t
RC
ADDRESS
t
AA
CS#
t
AA
t
ACS
t
CLZ
OE#
t
CHZ
t
OH
DATA I/O
PREVIOUS DATA VALID
READ CYCLE 1 (CS# = OE# = V
IL
, WE# = V
IH
)
DATA I/O
DATA VALID
t
OE
t
OLZ
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = V
IH
)
t
OHZ
WRITE CYCLE – WE# CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS#
t
AH
t
AS
WE#
t
WP
t
OW
t
WHZ
t
DW
DATA VALID
t
DH
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
t
WC
ADDRESS
t
AW
t
AS
CS#
t
WP
WE#
t
DW
DATA I/O
WRITE CYCLE 2, CS# CONTROLLED
DATA VALID
t
CW
t
AH
t
DH
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011
Rev. 7
© 2011 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
WS1M32-XG3X
84 LEAD, CERAMIC QUAD FLAT PACK (G3)
30.23 (1.190) ± 0.25 (0.010) SQ
27.18 (1.070) ± 0.25 (0.010) SQ
4.29 (0.169)
± 0.28 (0.011)
4.12 (0.162) ± 0.20 (0.008)
Pin 1
0.25 (0.010)
± 0.03 (0.002)
R 0.127
(0.005) MIN
29.11 (1.146)
± 0.25 (0.010)
1 /7
1.02 (0.040)
± 0.12 (0.005)
+
0.19 (0.008)
± 0.06 (0.003)
DETAIL A
1.27 (0.050) TYP
0.38 (0.015)
± 0.05 (0.002)
25.40 (1.000) TYP
SEE DETAIL "A"
0.27 (0.011)
± 0.04 (0.001)
The MICROSEMI 84 lead G3 CQFP
fi
lls the same
fi
t and function as the
JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead
inspection advantage of the CQFP form.
29.11 (1.146)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011
Rev. 7
© 2011 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
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