EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND01GW3A0CZB1F

Description
Flash, 128MX8, 35ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
Categorystorage    storage   
File Size917KB,57 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance  
Download Datasheet Parametric View All

NAND01GW3A0CZB1F Overview

Flash, 128MX8, 35ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63

NAND01GW3A0CZB1F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA,
Contacts63
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PBGA-B63
length11 mm
memory density1073741824 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals63
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeSLC NAND TYPE
width9 mm
Base Number Matches1
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
Figure 1. Packages
NAND INTERFACE
TSOP48 12 x 20mm
SUPPLY VOLTAGE
PAGE SIZE
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
Random access: 12µs (max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
Fast page copy without external buffering
USOP48 12 x 17 x 0.65mm
FBGA
BLOCK SIZE
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
PAGE READ / PROGRAM
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
Lead-Free Components are Compliant
with the RoHS Directive
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
COPY BACK PROGRAM MODE
FAST BLOCK ERASE
Block erase time: 2ms (Typ)
RoHS COMPLIANCE
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
Program/Erase locked during Power
transitions
DEVELOPMENT TOOLS
February 2005
1/57
Questions about op amp parameters
As shown in the red box in the picture, what does RS stand for? Thank you!...
xiaxingxing Analog electronics
Xunwei 4412 development board burns QT program to the development board with one click
Before, when we wrote a program, we would first cross-compile it, then copy it to the development board through nfs/tftp or other methods, and then execute it manually. If we debug the program frequen...
遥寄山川 ARM Technology
Question about capacitors
I have used chip capacitors (connected between the 3V power supply and the ground) in a product powered by a 3V lithium battery. I have found that occasionally (with a probability of one percent) the ...
一沙一世 stm32/stm8
CC1310 Direct Operation Register Programming
The official CC13x0 driver is relatively abstract in order to be compatible with a variety of devices and operating systems. For example, the serial port sending function is as follows: int_fast32_t U...
火辣西米秀 Wireless Connectivity
Practical RF training course sharing 3
RF Basics Lecture...
btty038 RF/Wirelessly
E2PROM maximum capacity
The project requires a large capacity E2PROM. What is the maximum capacity of E2PROM now? In addition, I found the following chip. Is it flash or E2PROM? I am a little confused....
sudongpo2018 ARM Technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号