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IRFM214BS62Z

Description
Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size693KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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IRFM214BS62Z Overview

Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFM214BS62Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)0.64 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRFM214BS62Z Related Products

IRFM214BS62Z IRFM214BD84Z IRFM214BL99Z
Description Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker Fairchild Fairchild Fairchild
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V 250 V
Maximum drain current (ID) 0.64 A 0.64 A 0.64 A
Maximum drain-source on-resistance 2 Ω 2 Ω 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 10 pF 10 pF 10 pF
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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