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150KR160

Description
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
File Size80KB,1 Pages
ManufacturerNaina Semiconductor
Websitehttp://www.nainasemi.com
Download Datasheet View All

150KR160 Overview

Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits

45L/150K
SILICON POWER DIODE
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
I
F
V
FM
I
FSM
I
FRM
I
2
t
Maximum Average Forward
Current Te=150
0
C
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive
surge current
Maximum I
2
t rating (non-rep.) for
5 to 10 msec.
150A
1.4V
3570A
750A
64,000 A2 Sec
NAINA
THERMAL MECHANICAL SPECIFICATIONS
θ
JC
Tj
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
0.25
0
C/W
-65
0
C to 150
0
C
-65
0
C to 200
0
C
2.0 M-kg min,
3.0 M-kg max
150 gms.
ELECTRICAL RATINGS
TYPE
V
RRM
45L/150K
Max. repetitive peak reverse
voltage (v)
V
R
(RMS)
V
R
Max. R.M.S. reverse voltage (V)
Max. D.C. Blocking Voltage (V)
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRRM Tc 25
0
C (uA)
10
100
70
100
40
200
20
200
140
200
80
200
40
400
280
400
160
200
60
600
420
600
240
200
80
800
560
800
320
200
100
1000
700
1000
400
200
120
1200
840
1200
480
200
140
160
1400 1600
980
1120
1400 1600
560
200
640
200
I
R
(AV)
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR-63, NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site:www.nainasemi.com
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