QS8M11TR datasheet, PDF - EEWORLD Datasheet

QS8M11TR: DescriptionPower Field-Effect Transistor, 3.5A I(D), 30V, 0.07ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，9 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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QS8M11TR Overview

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.07ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	3.5 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.07 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	1.5 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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