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MT46V8M16BJ-5BL

Description
DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, PLASTIC, FBGA-60
Categorystorage    storage   
File Size2MB,82 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT46V8M16BJ-5BL Overview

DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, PLASTIC, FBGA-60

MT46V8M16BJ-5BL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionTBGA, BGA60,9X12,40/32
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
length16 mm
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply2.6 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9 mm
Base Number Matches1
128Mb: x4, x8, x16
DDR SDRAM
DOUBLE DATA RATE
(DDR) SDRAM
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR 400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two
– one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• Longer lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
t
RAS lockout supported (
t
RAP =
t
RCD)
OPTIONS
• Configuration
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic Package – OCPL
66-pin TSOP
66-pin TSOP (lead-free)
1
• Plastic Package
60-Ball FBGA (16x9mm)
11
60-Ball FBGA (16x9mm) (lead-free)
1, 11
• Timing – Cycle Time
5ns @ CL = 3 (DDR400)
2, 12
6ns @ CL = 2.5 (DDR333) (FBGA only)
3, 11, 12
6ns @ CL = 2.5 (DDR333) (TSOP only)
3, 4
7.5ns @ CL = 2 (DDR266)
5
7.5ns @ CL = 2 (DDR266A)
6
7.5ns @ CL = 2.5 (DDR266B)
7, 8
• Self Refresh
Standard
Low Power Self Refresh
• Temperature Rating
Standard (0°C to +70°C)
Industrial Temperature (-40°C to +85°C)
MARKING
32M4
16M8
8M16
TG
P
FJ
BJ
-5B
-6
-6T
-75E
-75Z
-75
None
L
None
IT
MT46V32M4 – 8 MEG x 4 x 4 BANKS
MT46V16M8 – 4 MEG x 8 x 4 BANKS
MT46V8M16 – 2 MEG x 16 x 4 BANKS
For the latest data sheet revisions, please refer to the
Micron Web site: www.micron.com/datasheets
Figure 1: Pin Assignment (Top View)
66-pin TSOP
x4
x8
x16
V
DD
V
DD
V
DD
NC
DQ0
DQ0
V
DD
Q V
DD
Q
V
DD
Q
NC
DQ1
NC
DQ0
DQ1
DQ2
V
SS
Q
V
SS
Q
VssQ
NC
DQ3
NC
NC
DQ2
DQ4
V
DD
Q V
DD
Q
V
DD
Q
NC
NC
DQ5
DQ1
DQ3
DQ6
V
SS
Q
V
SS
Q
VssQ
NC
DQ7
NC
NC
NC
NC
V
DD
Q V
DD
Q
V
DD
Q
NC
NC
LDQS
NC
NC
NC
V
DD
V
DD
V
DD
DNU
DNU
DNU
NC
NC
LDM
WE#
WE#
WE#
CAS#
CAS#
CAS#
RAS#
RAS#
RAS#
CS#
CS#
CS#
NC
NC
NC
BA0
BA0
BA0
BA1
BA1
BA1
A10/AP A10/AP A10/AP
A0
A0
A0
A1
A1
A1
A2
A2
A2
A3
A3
A3
V
DD
V
DD
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
x16
V
SS
DQ15
V
SS
Q
DQ14
DQ13
V
DD
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
DD
Q
DQ8
NC
V
SS
Q
UDQS
DNU
V
REF
V
SS
UDM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
x8
V
SS
DQ7
V
SS
Q
NC
DQ6
V
DD
Q
NC
DQ5
V
SS
Q
NC
DQ4
V
DD
Q
NC
NC
V
SS
Q
DQS
DNU
V
REF
V
SS
DM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
x4
V
SS
NC
V
SS
Q
NC
DQ3
V
DD
Q
NC
NC
V
SS
Q
NC
DQ2
V
DD
Q
NC
NC
V
SS
Q
DQS
DNU
V
REF
V
SS
DM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
32 MEG x 4
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
8 Meg x 4 x 4
banks
4K
4K (A0–A11)
4(BA0,BA1)
2K(A0–A9,A11)
16 MEG x 8
4 Meg x 8 x 4
banks
4K
4K (A0–A11)
4(BA0,BA1)
1K(A0–A9)
8 MEG x 16
2 Meg x 16 x 4
banks
4K
4K (A0–A11)
4(BA0,BA1)
512(A0–A8)
Table 1:
Key Timing Parameters
CLOCK RATE
9
DATA-OUT ACCESS DQS–DQ
SPEED
GRADE CL = 2 CL = 2.5 CL = 3
WINDOW
10
WINDOW SKEW
-5B
-6
6T
-75
133 MHz 167 MHz 200 MHz
133 MHz 167 MHz
133 MHz 167 MHz
100 MHz 133 MHz
N/A
N/A
N/A
N/A
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
+0.40ns
+0.40ns
+0.45ns
+0.50ns
+0.50ns
-75E/75Z 133 MHz 133 MHz
NOTE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Contact Micron for availability of lead-free products.
Supports PC3200 modules with 3-3-3 timing.
Supports PC2700 modules with 2.5-3-3 timing.
-6T is not available in the x16 configuration.
Supports PC2100 modules with 2-2-2 timing.
Supports PC2100 modules with 2-3-3 timing.
Supports PC2100 modules with 2.5-3-3 timing.
Supports PC1600 modules with 2-2-2 timing.
CL = CAS (READ) latency.
Minimum clock rate @ CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75),
and CL = 3 (-5B).
11. FBGA package is EOL and no longer available.
12. Not available.
09005aef8074a655
128MBDDRx4x8x16_1.fm - Rev. J 7/04 EN
1
©2000 Micron Technology, Inc. All rights reserved.

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