This product complies with the RoHS Directive (EU 2002/95/EC).
DME20501
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini6-G4-B
Name
Pin
1: Emitter (Tr1)
2: Base (Tr2)
3: Base (Tr2)
Basic Part Number
DSA2001 + DSC2001 (Individual)
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
Marking Symbol: B1
Internal Connection
(C1)
6
(E2)
5
(C2)
4
Tr2
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
–60
–50
–7
–100
–200
60
50
7
100
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
V
V
V
mA
mA
mW
°C
°C
Tr1
1
(E1)
2
(B1)
3
(B2)
Publication date: December 2010
Ver. CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20501
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
I
E
= –10 µA, I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –10 V, I
B
= 0
V
CE
= –10 V, I
C
= –2 mA
I
C
= –100 mA, I
B
= –10 mA
V
CE
= –10 V, I
C
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
210
– 0.2
150
2
Min
–60
–50
–7
– 0.1
–100
460
– 0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 10 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
210
0.13
150
1.5
Min
60
50
7
0.1
100
460
0.3
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
DME20501_PT-Ta
P
T
T
a
350
300
250
200
150
100
50
0
Total power dissipation P
T
(mW)
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
2
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20501
Characteristics charts of Tr1
I
C
V
CE
−120
T
a
=
25°C
−100
I
B
= −600 µA
−500 µA
−400 µA
−60
−40
−20
0
−300 µA
−200 µA
−100 µA
DME20501(Tr1)_IC-VCE
600
DME20501(Tr1)_hFE-IC
h
FE
I
C
DME20501(Tr1)_VCEsat-IC
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
CE
= −10
V
I
C
/ I
B
= 10
Forward current transfer ratio h
FE
500
400
300
200
100
0
−
0.1
Collector current I
C
(mA)
−80
T
a
=
85°C
25°C
−30°C
−1
−
0.1
T
a
=
85°C
−30°C
25°C
−1
−10
−100
0
−2
−4
−6
−8
−10
−12
−1
−10
−100
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
DME20501(Tr1)_IC-VBE
Collector current I
C
(mA)
DME20501(Tr1)_Cob-VCB
Collector current I
C
(mA)
DME20501(Tr1)_fT-IC
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−120
V
CE
= −10
V
−100
25°C
4.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
250
V
CE
=
−10
V
T
a
=
25°C
f
T
I
C
Transition frequency f
T
(MHz)
Collector current I
C
(mA)
T
a
=
85°C
−80
−60
−40
−20
0
−30°C
200
3.0
150
2.0
100
1.0
50
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −1.2
0
−1
−10
−100
0
−
0.1
−1
−10
−100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Characteristics charts of Tr2
DME20501(Tr2)_IC-VCE
I
C
V
CE
120
T
a
=
25°C
100
600
DME20501(Tr2)_hFE-IC
h
FE
I
C
DME20501(Tr2)_VCEsat-IC
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
CE
=
10 V
I
C
/ I
B
= 10
Forward current transfer ratio h
FE
500
400
300
200
100
0
0.1
T
a
=
85°C
Collector current I
C
(mA)
80
60
40
20
0
I
B
=
250
µA
200
µA
150
µA
100
µA
50
µA
1
25°C
−30°C
0.1
T
a
=
85°C
−30°C
25°C
0
2
4
6
8
10
12
1
10
100
0.01
0.1
1
10
100
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
Ver. CED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20501
DME20501(Tr2)_IC-VBE
I
C
V
BE
DME20501(Tr2)_Cob-VCB
C
ob
V
CB
DME20501(Tr2)_fT-IC
f
T
I
C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
120
V
CE
=
10 V
100
25°C
4.0
Transition frequency f
T
(MHz)
I
E
= 0
f = 1 MHz
T
a
= 25°C
250
V
CE
= 10 V
T
a
=
25°C
200
Collector current I
C
(mA)
T
a
=
85°C
80
60
40
20
0
−30°C
3.0
150
2.0
100
1.0
50
0
0.4
0.8
1.2
0
1
10
100
0
0.1
1
10
100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
4
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20501
Mini6-G4-B
Unit: mm
2.90
−
0.05
+0.20
0.50
−
0.05
+0.10
+0.10
0.30
−
0.05
0.13
−
0.02
+0.05
6
5
4
1.50
−
0.05
+0.25
2.8
−
0.3
+0.2
1
2
(0.95)
3
(0.65)
(0.95)
1.9
±0.1
8°
1.1
−
0.1
+0.2
0 to 0.1
1.1
−
0.1
+0.3
0.4
±0.2
6°
Ver. CED
5
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