Preliminary
RF2174
3V DCS POWER AMPLIFIER
2
Typical Applications
• 3V DCS1800 (PCN) Cellular Handsets
• 3V DCS1900 (PCS) Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GPRS Compatible
2
POWER AMPLIFIERS
Product Description
The RF2174 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in DCS1800/1900 hand-held digital
cellular equipment and other applications in the
1700MHz to 2000MHz band. On-board power control
provides over 65dB of control range with an analog volt-
age input, and provides power down with a logic "low" for
standby operation. The device is self-contained with 50Ω
input and the output can be easily matched to obtain opti-
mum power and efficiency characteristics. The RF2174
can be used together with the RF2173 for dual-band
operation. The device is packaged in an ultra-small plas-
tic package, minimizing the required board space.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
2
3.75
0.75
0.50
0.45
0.28
0.80
TYP
1
1
3.75
+
1.60 4.00
12°
1.50 SQ
INDEX AREA 3
3.20
4.00
1.00
0.90
0.75
0.65
NOTES:
1 Shaded Pin is Lead 1.
2
Dimension applies to plated terminal and is measured between
0.10 mm and 0.25 mm from terminal tip.
0.05
0.00
The terminal #1 identifier and terminal numbering convention
3 shall conform to JESD 95-1 SPP-012. Details of terminal #1
identifier are optional, but must be located within the zone
indicated. The identifier may be either a mold or marked
feature.
4
5
Pins 1 and 9 are fused.
Package Warpage: 0.05 max.
ü
GaAs HBT
SiGe HBT
VCC2
VCC2
Package Style: LCC, 16-Pin, 4x4
GaAs MESFET
Si CMOS
Features
• Single 2.7V to 4.8V Supply Voltage
• +33dBm Output Power at 3.5V
• 27dB Gain with Analog Gain Control
• 51% Efficiency
VCC2
14
GND
1
AT_EN
RF IN
GND1
2
3
4
5
VCC1
16
15
13
12
11
10
RF OUT
2F0
• 1700MHz to 1950MHz Operation
RF OUT
RF OUT
• Supports DCS1800 and PCS1900
6
APC1
7
APC2
8
VCC
9
GND
Ordering Information
RF2174
RF2174 PCBA
3V DCS Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A6 010720
2-231
RF2174
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
APC
)
Enable Voltage (V
AT_EN
)
Preliminary
Rating
-0.5 to +6.0
-0.5 to +3.0
-0.5 to +3.0
1500
+13
50
10:1
-40 to +85
-55 to +150
Unit
V
DC
V
V
mA
dBm
%
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
DC Supply Current
Input RF Power
Duty Cycle at Max Power
Output Load VSWR
Operating Case Temperature
Storage Temperature
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Temp=25 °C, V
CC
=3.5V, V
APC1,2
=2.6V,
V
AT_EN
=2.6V, P
IN
=+6dBm, Freq=1710MHz
to 1910MHz, 25% Duty Cycle, pulse
width=1154µs
See application schematic for tuning details.
A different tuning is required.
Temp=25 °C, V
CC
=3.5V, V
APC1,2
=2.6V
Temp=+25 °C, V
CC
=3.2V, V
APC1,2
=2.6V
Temp=+85 °C, V
CC
=3.2V, V
APC1,2
=2.6V
Temp=25 °C, V
CC
=2.7V, V
APC1,2
=2.6V
Temp=+85 °C, V
CC
=2.7V, V
APC1,2
=2.6V
At P
OUT,MAX
, V
CC
=3.5V
At P
OUT,MAX
, V
CC
=3.0V
P
OUT
=+20dBm
P
OUT
=+10dBm
Overall
Operating Frequency Range
Usable Frequency Range
Maximum Output Power
1710 to 1785
1850 to 1910
1700 to 2000
+33
+32.8
+31.5
+31
+30
51
51
15
10
+7
MHz
MHz
MHz
dBm
dBm
dBm
dBm
dBm
%
%
%
%
dBm
dBm
+32
+31.5
Total Efficiency
+29.5
45
Recommended Input Power
Range
Output Noise Power
+5
+9
-79
Forward Isolation
Second Harmonic
Third Harmonic
All Other Non-Harmonic Spuri-
ous
Input Impedance
Input VSWR
Output Load VSWR
Output Load Impedance
10:1
-37
-40
-60
-65
-30
-35
-45
-50
-36
dBm
dBm
dBc
dBc
dBm
Ω
RBW=100kHz, 1805MHz to 1880MHz and
1930MHz to 1990MHz,
P
OUT,MIN
<P
OUT
<P
OUT,MAX
,
P
IN,MIN
<P
IN
<P
IN,MAX
, V
CC
=3.0V to 5.0V
V
APC1,2
=0.2V, P
IN
=+9dBm
V
APC1,2
=0.2V, P
IN
=+6dBm
P
OUT
<+32.5dBm
50
2.2:1
3:1
4.5-j3.9
2.6
0.2
2.5
0.2
0.5
2.6
0.5
2.85
Ω
V
V
V
V
P
OUT,MAX
-5dB<P
OUT
<P
OUT,MAX
P
OUT
<P
OUT,MAX
-5dB
Spurious<-36dBm, V
APC1,2
=0.2V to 2.6V,
RBW=100kHz
Load Impedance presented at RF OUT pin
Maximum P
OUT
, Voltage supplied to the
input
Minimum P
OUT
, Voltage supplied to the input
For maximum isolation when V
APC
is low
For power down mode
Power Control
Power Control “ON”
Power Control “OFF”
Attenuator Enable “ON”
Attenuator Enable “OFF”
2-232
Rev A6 010720
Preliminary
Parameter
Power Control Range
Gain Control Slope
APC Input Capacitance
APC Input Current
AT_EN Input Current
Turn On/Off Time
RF2174
Specification
Min.
Typ.
Max.
62
68
100
4.5
10
5
10
500
10
100
Unit
dB
dB/V
pF
mA
µA
µA
µA
ns
V
V
V
A
mA
µA
µA
Condition
V
APC1,2
=0.2V to 2.6V, V
AT_EN
=2.6V,
P
IN
=+9dBm
P
OUT
=-10dBm to +33dBm
DC to 2MHz
V
APC1,2
=2.6V
V
APC1,2
=0V
V
AT_EN
=2.6V, V
APC1,2
=0V
V
AT_EN
=0V, V
APC1,2
=0V
2
POWER AMPLIFIERS
Power Supply
Power Supply Voltage
2.7
3.5
4.8
5.5
1.3
50
1
1
300
10
10
Specifications
Nominal operating limits, P
OUT
<+33dBm
With maximum output load VSWR 6:1,
P
OUT
<+33dBm
DC Current at P
OUT,MAX
Idle Current, P
IN
<-30dBm
P
IN
<-30dBm, V
APC1,2
=0.2V
P
IN
<-30dBm, V
APC1,2
=0.2V, Temp=+85°C
Power Supply Current
Rev A6 010720
2-233
RF2174
Pin
1
2
Function
GND
AT_EN
Description
Internally connected to the ground slug.
Control input for the PIN diode. The purpose of the PIN diode is to
attenuate the RF input drive level when the V
APC
is low. This serves
both to reduce the leakage through the device cause by self biasing
when driving with high level at the RF input, as well as to maintain a
good input match when the bias of the input stage is turned off. When
this pin is “high” the PIN diode control is turned on. See the Theory of
Operation for more details.
RF Input. This is a 50Ω input, but the actual impedance depends on the
interstage matching network connected to pin 5. An external DC block-
ing capacitor is required if this port is connected to a DC path to ground
or a DC voltage.
Preliminary
Interface Schematic
See pin 15.
To PIN
diode
3k
Ω
AT_EN
GND1
2
POWER AMPLIFIERS
3
RF IN
VCC1
RF IN
PIN
From Attn
control circuit
GND 1
From Bias
Stages
4
GND1
5
VCC1
6
APC1
Ground connection for the pre-amplifier stage. Keep traces physically
See pin 3.
short and connect immediately to the ground plane for best perfor-
mance. It is important for stability that this pin has it’s own vias to the
groundplane, to minimize any common inductance.
Power supply for the pre-amplifier stage and interstage matching. This See pin 3.
pin forms the shunt inductance needed for proper tuning of the inter-
stage match. Please refer to the application schematic for proper con-
figuration, and note that position and value of the components are
important.
Power Control for the driver stage and pre-amplifier. When this pin is
APC VCC
"low," all circuits are shut off. A "low" is typically 0.5V or less at room
temperature. A shunt bypass capacitor is required. During normal oper-
ation this pin is the power control. Control range varies from about 1.0V
for -10dBm to 2.6V for +33dBm RF output power. The maximum power
that can be achieved depends on the actual output matching; see the
application information for more details. The maximum current into this
pin is 5mA when V
APC1
=2.6V, and 0mA when V
APC
=0V.
GND
GND
To RF
Stages
7
8
9
10
APC2
VCC
GND
RF OUT
Power Control for the output stage. See pin 6 for more details.
Power supply for the bias circuits.
Internally connected to the ground slug.
RF Output and power supply for the output stage. Bias voltage for the
final stage is provided through this wide output pin. An external match-
ing network is required to provide the optimum load impedance.
See pin 6.
See pin 6.
RF OUT
From Bias
GND
Stages
PCKG BASE
11
12
13
RF OUT
RF OUT
2F0
Same as pin 10.
Same as pin 10.
Connection for the second harmonic trap. This pin is internally con-
nected to the RF OUT pins. The bonding wire together with an external
capacitor form a series resonator that should be tuned to the second
harmonic frequency in order to increase efficiency and reduce spurious
outputs.
Same as pin 15.
Same as pin 10.
Same as pin 10.
Same as pin 10.
14
VCC2
2-234
Rev A6 010720
Preliminary
Pin
15
Function
VCC2
Description
Power supply for the driver stage and interstage matching. This pin
forms the shunt inductance needed for proper tuning of the interstage
match. Please refer to the application schematic for proper configura-
tion, and note that position and value of the components are important.
RF2174
Interface Schematic
VCC2
From Bias
GND2
Stages
Rev A6 010720
2-235
POWER AMPLIFIERS
16
Pkg
Base
VCC2
GND
Same as pin 15.
Ground connection for the output stage. This pad should be connected
to the groundplane by vias directly under the device. A short path is
required to obtain optimum performance, as well as to provide a good
thermal path to the PCB for maximum heat dissipation.
Same as pin 15.
2
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