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1S60

Description
1 A, 80 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size44KB,3 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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1S60 Overview

1 A, 80 V, SILICON, SIGNAL DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
1S20
THRU
1SA0
1.0 Amp Schottky
Barrier Rectifier
20 to 100 Volts
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low power loss, high efficiency
High current capability, Low forward voltage drop
High surge capability
Metal silicon junction, majority carrier conduction
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +125°C
Maximum Thermal Resistance: 50
o
C/W Junction to Lead
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
Maximum
RMS
Voltage
14V
21V
28V
35V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
40V
50V
60V
80V
100V
R-1
Part Number
1S20
1S30
1S40
1S50
1S60
1S80
1SA0
D
A
Cathode Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0 A
T
C
= 75°C
Current
Peak Forward Surge
I
FSM
35A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
I
FM
= 1.0A;
V
F
1S20-1S40
0.55V
T
C
= 25°C
1S50-1S60
0.70V
1S80-1SA0
0.85V
Maximum DC
0.5mA
T
C
= 25°C
Reverse Current At
I
R
10mA
T
C
= 100°C
Rated DC Blocking
Voltage
Measured at
Typical Junction
110pF
C
J
1.0MHz, V
R
=4.0V
Capacitance
Pulse Test: Pulse width 300 usec, Duty cycle 1%.
D
C
DIMENSIONS
INCHES
DIM
MIN
A
B
C
D
0.116
0.091
0.020
0.787
MAX
0.140
0.102
0.024
-----
MIN
2.90
2.30
0.50
20.00
MAX
3.50
2.60
0.60
-----
MM
NOTE
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