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HN3C56FU(TE85L)

Description
HN3C56FU(TE85L)
CategoryDiscrete semiconductor    The transistor   
File Size194KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

HN3C56FU(TE85L) Overview

HN3C56FU(TE85L)

HN3C56FU(TE85L) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
HN3C56FU
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN3C56FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current
High h
FE
Excellent h
FE
linearity
: V
CEO
= 50V, I
C
= 150mA (max)
: h
FE
= 120~400
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
200
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
1.COLLECTOR1
2.EMITTER1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.BASE1
(C1)
(E2)
(C2)
(E2)
(B2)
(B1)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 130mW.
Note:
JEDEC
JEITA
TOSHIBA
2-2J1A
Weight: 0.0068mg (typ.)
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
=10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MH
z
Min
120
60
Typ.
0.1
2
Max
0.1
0.1
400
0.25
Unit
μA
μA
V
MH
z
pF
Marking
6
5
4
Equivalent Circuit
(Top View)
6
Q1
5
4
38
1
2
3
1
2
Q2
3
1
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