MG8Q6ES46 datasheet, PDF - EEWORLD Datasheet

MG8Q6ES46: DescriptionTRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor; CategoryDiscrete semiconductor The transistor; File Size48KB，1 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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MG8Q6ES46 Overview

TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Number of components	6
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
Transistor component materials	SILICON
Base Number Matches	1

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