HN2E02F-Y datasheet, PDF - EEWORLD Datasheet

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HN2E02F-Y: DescriptionTRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size256KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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HN2E02F-Y Overview

TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal

HN2E02F-Y Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G6
Number of components	1
Number of terminals	6
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

HN2E02F-Y Related Products

	HN2E02F-Y	HN2E02F-BL	HN2E02F-GR
Description	TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	2-3N1D, SM6, 6 PIN
Contacts	6	6	6
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	120	350	200
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	1	1	1
Number of terminals	6	6	6
Maximum operating temperature	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	60 MHz	60 MHz
Base Number Matches	1	1	-

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