TLP284
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP284
Programmable Controllers
AC/DC−Input Module
Hybrid ICs
TLP284 consist of photo transistor, optically coupled to two gallium arsenide
infrared emitting diode connected inverse parallel, and can operate directly
by AC input current
Since TLP284 are guaranteed wide operating temperature (Ta=-55 to 110
˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as programmable controllers and hybrid ICs.
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Collector−emitter voltage : 80 V (min)
Current transfer ratio
Rank GB
Isolation voltage
UL Recognized
cUL Recognized
BSI (under application)
: 50% (min)
:100% (min)
: 3750 Vrms (min)
: UL1577 , File No. E67349
: CSA Component Acceptance Service No.5A
: BS EN 60065: 2002,
: BS EN 60950-1: 2006
TOSHIBA
11-3A1
Weight: 0.05 g (typ.)
Unit in mm
TLP284
Guaranteed performance over -55 to 110
˚C
Pin Configuration
TLP284
1
2
4
3
Option (V4)
VDE approved
: EN60747-5-2
Maximum operating insulation voltage : 707 V
pk
Highest permissible over voltage
: 6000 V
pk
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
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2009-05-27
TLP284
Current Transfer Ratio
TYPE
Classi-
Fication(Note1)
Current Transfer Ration (%)
(I
C
/ I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25℃
Min
Blank
Rank Y
TLP284
Rank GR
Rank BL
Rank GB
50
50
100
200
100
Max
600
150
300
600
600
Blank ,YE,GR,BL,GB
YE
GR
BL
GB
Marking of Classification
Note1: Ex. rank GB: TLP284 (GB)
Application type name for certification test, please use standard product type name, i.e.
TLP284 (GB): TLP284
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
LED
Forward current derating
Pulse forward current (Note2)
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta
≥
25°C)
Isolation voltage
(Note3)
Symbol
I
F(RMS)
ΔI
F
/°C
I
FP
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
Rating
±50
-1.0 (Ta
≥
75°C)
±1
125
80
7
50
150
−1.5
125
−55~125
−55~110
260 (10s)
200
−2.0
3750
Unit
mA
mA /°C
A
°C
V
V
mA
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2:
Note3:
Pulse width
≤
100μs, frequency 100Hz
AC, 1min., R.H.≤ 60%, Device considered a two terminal device: LED side pins shorted together and
detector side pins shorted together.
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2009-05-27
TLP284
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
LED
Forward voltage
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Detector
Symbol
V
F
C
T
V
(BR) CEO
V
(BR) ECO
Test Condition
I
F
= ±10 mA
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V,
Ambient light below
(100
ℓx)
V
CE
= 48 V, Ta = 85°C
Ambient light below
(100
ℓx)
V = 0, f = 1 MHz
Min
1.0
―
80
7
―
(Note 4)
―
(Note 4)
―
Typ
1.15
60
―
―
0.01
(2)
2
(4)
10
Max
1.3
—
—
—
0.1
(10)
50
(50)
―
Unit
V
pF
V
V
μA
μA
pF
Collector dark current
(Note 5)
Capacitance
(collector to emitter)
I
CEO
C
CE
Note 4: Irradiation to marking side using standard light bulb.
Note 5: Because of the construction, leak current might be increased by ambient light. Please use photocoupler
with less ambient light.
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
IF = ±1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
Collector−emitter
saturation voltage
Off−state collector current
CTR symmetry
V
CE (sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
I
C(off)
I
C (ratio)
V
F
= ± 0.7 V, V
CE
= 48 V
I
C
(I
F
=
−5
mA) / I
C
(I
F
= 5 mA)
Note 6
MIn
50
100
—
30
—
—
—
—
0.33
Typ.
—
—
60
—
—
0.2
—
—
—
Max
600
600
—
—
0.4
—
0.4
10
3
μA
—
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
%
Note 6:
I
C1
I
C2
=
5V)
I (I
=
I , V
IC(ratio)
=
C2 F F2 CE
IC1(IF
=
IF1, VCE
=
5V)
I
F1
I
F2
V
CE
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TLP284
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
—
1×10
12
Typ.
0.8
10
14
Max
—
—
—
—
—
Unit
pF
Ω
V
rms
V
dc
3750
—
—
—
10000
10000
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= ±16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
—
—
—
—
—
—
—
Typ.
2
3
3
3
2
25
40
Max
—
—
—
—
—
—
—
μs
μs
Unit
(Fig. 1): Switching time test circuit
I
F
R
L
V
CC
V
CE
I
F
V
CE
t
ON
t
S
V
CC
4.5V
0.5V
t
OFF
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2009-05-27
TLP284
I F - Ta
100
P C - Ta
200
180
I F (mA)
80
160
Allowable collector power
Dissipation PC (mW)
140
120
100
80
60
40
20
Allowable forward current
60
40
20
0
-20
0
20
40
60
80
100
120
)
0
-20
0
20
40
60
80
100
120
Ambient temperature
Ta
(˚C)
Ambient temperature
Ta
(˚C)
IFP-DR
IF-VF
3000
PULSE WIDTH
≦100μs
Ta=25˚C
100
(mA)
1000
500
300
I
FP
(mA)
I
F
10
Pulse forward current
100
50
30
Forward current
1
100˚C
75˚C
50˚C
25˚C
0˚C
-25˚C
-50˚C
10
0.1
10
-3
10
-2
10
-1
10
0
0.6
0.8
1
1.2
1.4
1.6
Duty cycle ratio
D
R
Forward voltage
V
F
(V)
∆
V F /
∆
Ta - I F
-3.2
1000
IFP – VFP
Forward voltage temperature coefficient
ΔV
F /ΔTa (mV/℃)
-2.8
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1
0.5
(mA)
Pulse forward current
I
FP
100
10
Pulse width≦10μs
Repetitive
Frequency=100Hz
Ta=25℃
1
0.6
1
1.4
1.8
2.2
2.6
3
1
5
10
50
Forward current
I
F
(mA)
Pulse forward voltage
V
FP
(V)
*The above graphs show typical characteristic.
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2009-05-27
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