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K6R4008V1C-TL150

Description
Standard SRAM, 512KX8, 15ns, CMOS, PDSO44
Categorystorage    storage   
File Size137KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6R4008V1C-TL150 Overview

Standard SRAM, 512KX8, 15ns, CMOS, PDSO44

K6R4008V1C-TL150 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionTSOP, TSOP44,.46,32
Reach Compliance Codecompliant
Maximum access time15 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of terminals44
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.0007 A
Minimum standby current2 V
Maximum slew rate0.135 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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