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K6R3024V1D-HI100

Description
SRAM Module, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
Categorystorage    storage   
File Size173KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K6R3024V1D-HI100 Overview

SRAM Module, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

K6R3024V1D-HI100 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time10 ns
JESD-30 codeR-PBGA-B119
length22 mm
memory density3145728 bit
Memory IC TypeSRAM MODULE
memory width24
Number of functions1
Number of terminals119
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX24
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
Base Number Matches1
K6R3024V1D
Document Title
128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
for AT&T
CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
History
Design-In Specification
Pin Configurations Modified ( page 2 )
Add Timing Diagram page 6 ~ 8 )
Modified Read Cycle Timing(2)
1) Version change from M to D
2) C
in
from 20 to 15 pF
3) Icc from 300 to 170mA for 9ns products
from 270 to 150mA for 10ns products
from 240 to 130mA for 12ns products
4) Isb ( TTL ) from 120 to 40 mA for all products
( CMOS ) from 30 to 15 mA for all products
5) Part number change from -9 to -09 for 9ns products
Change write parameter( tDW) from 6ns to 5ns at -10
Final Specification Release
Draft Data
Dec. 05. 2000
Mar. 07. 2001
April. 04.2001
June. 23.2001
Remark
Design-In
Preliminary
Preliminary
Preliminary
Rev. 0.4
Rev. 1.0
Oct. 31. 2001
Dec. 19. 2001
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 1.0
December 2001

K6R3024V1D-HI100 Related Products

K6R3024V1D-HI100 K6R3024V1D-HI090 K6R3024V1D-HC100 K6R3024V1D-HI120 K6R3024V1D-HC120 K6R3024V1D-HC090
Description SRAM Module, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 SRAM Module, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction BGA, 14 X 22 MM, BGA-119 BGA, BGA, BGA, BGA,
Contacts 119 119 119 119 119 119
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 10 ns 9 ns 10 ns 12 ns 12 ns 9 ns
JESD-30 code R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
length 22 mm 22 mm 22 mm 22 mm 22 mm 22 mm
memory density 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 24 24 24 24 24 24
Number of functions 1 1 1 1 1 1
Number of terminals 119 119 119 119 119 119
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 70 °C 85 °C 70 °C 70 °C
organize 128KX24 128KX24 128KX24 128KX24 128KX24 128KX24
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA BGA BGA BGA BGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL BALL BALL BALL BALL
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Maker SAMSUNG - - SAMSUNG SAMSUNG SAMSUNG
Base Number Matches 1 1 1 1 - -
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