MH2M04B1J-10 datasheet, PDF - EEWORLD Datasheet

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MH2M04B1J-10: DescriptionDRAM Module, 1MX8, 100ns, CMOS, SIMM-30; Categorystorage storage; File Size314KB，10 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH2M04B1J-10 Overview

DRAM Module, 1MX8, 100ns, CMOS, SIMM-30

MH2M04B1J-10 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	SIMM
package instruction	SIMM, SIM30
Contacts	30
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	NIBBLE
Maximum access time	100 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XSMA-N30
memory density	8388608 bit
Memory IC Type	DRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	30
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SIM30
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	20.32 mm
Maximum standby current	0.004 A
Maximum slew rate	0.48 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	2.54 mm
Terminal location	SINGLE
Base Number Matches	1

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MH2M04B1J-10 Related Products

	MH2M04B1J-10	MH2M04B1J-8	MH2M04B1JA-10	MH2M04B1JA-8	MH2M04B1JA-7	MH2M04B1J-7
Description	DRAM Module, 1MX8, 100ns, CMOS, SIMM-30	DRAM Module, 1MX8, 80ns, CMOS, SIMM-30	DRAM Module, 1MX8, 100ns, CMOS, SIMM-30	DRAM Module, 1MX8, 80ns, CMOS, SIMM-30	DRAM Module, 1MX8, 70ns, CMOS, SIMM-30	DRAM Module, 1MX8, 70ns, CMOS, SIMM-30
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Parts packaging code	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
package instruction	SIMM, SIM30	SIMM, SIM30	, SIP30,.2	, SIP30,.2	, SIP30,.2	SIMM, SIM30
Contacts	30	30	30	30	30	30
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE
Maximum access time	100 ns	80 ns	100 ns	80 ns	70 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-N30	R-XSMA-N30	R-XSMA-T30	R-XSMA-T30	R-XSMA-T30	R-XSMA-N30
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bi
Memory IC Type	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	30	30	30	30	30	30
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Encapsulate equivalent code	SIM30	SIM30	SIP30,.2	SIP30,.2	SIP30,.2	SIM30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512	512
Maximum seat height	20.32 mm	20.32 mm	21.082 mm	21.082 mm	21.082 mm	20.32 mm
Maximum standby current	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A
Maximum slew rate	0.48 mA	0.56 mA	0.48 mA	0.56 mA	0.64 mA	0.64 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

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