INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY76
DESCRIPTION
·Excellent
Safe Operating Area
·High
DC Current Gain-
: h
FE
= 40~120@I
C
= 10A
·Low
Saturation Voltage-
: V
CE(
sat
)= 1.4V(Max)@ I
C
= 10A
APPLICATIONS
·Designed
for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
w
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i
em
cs
.is
w
w
VALUE
100
80
60
7
UNIT
V
V
V
V
20
A
30
5
150
200
-65~200
A
A
W
℃
℃
Base Current-Continuous
Collector Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BDY76
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 200mA; I
B
= 0
60
V
V
(BR)CER
Collector-Emitter Breakdown Voltage
I
C
= 200mA; R
BE
=100Ω
70
V
V
(BR)CEX
Collector-Emitter Breakdown Voltage
I
C
= 200mA; V
BE(
off
)
= 1.5V
I
C
= 10A; I
B
= 1A
I
C
= 10A; V
CE
= 4V
80
V
V
CE
(sat)
V
BE(
on
)
I
CEO
Collector-Emitter Saturation Voltage
1.4
V
Base-Emitter On Voltage
2.2
V
Collector Cutoff Current
V
CE
= 50V; I
B
= 0
B
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE
f
T
DC Current Gain
Current-Gain—Bandwidth Product
w
em
cs
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w
w
V
CB
= 100V; I
E
= 0
V
CB
= 30V; I
E
= 0,T
C
=150℃
V
EB
= 7V; I
C
= 0
I
C
= 10A; V
CE
= 4V
I
C
= 1A; V
CE
= 4V
V
CE
= 100V; V
BE(
off
)
= 1.5V
V
CE
= 30V; V
BE(
off
)
= 1.5V,T
C
=150℃
.cn
i
40
0.8
10
5.0
10
5.0
10
5.0
mA
mA
mA
mA
120
MHz
isc Website：www.iscsemi.cn
2
Power technology
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