Synchronous DRAM Module, 4MX72, 6ns, CMOS, DIMM-168
| Parameter Name | Attribute value |
| Maker | Micron Technology |
| Parts packaging code | DIMM |
| package instruction | , |
| Contacts | 168 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | DUAL BANK PAGE BURST |
| Maximum access time | 6 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-XDMA-N168 |
| memory density | 301989888 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE |
| memory width | 72 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 168 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 4MX72 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| MT18LSDT472AG-10BXX | MT9LSDT272AG-10BXX | MT9LSDT272AG-662XX | MT18LSDT472AG-662XX | |
|---|---|---|---|---|
| Description | Synchronous DRAM Module, 4MX72, 6ns, CMOS, DIMM-168 | Synchronous DRAM Module, 2MX72, 6ns, CMOS, DIMM-168 | Synchronous DRAM Module, 2MX72, 7.5ns, CMOS, DIMM-168 | Synchronous DRAM Module, 4MX72, 7.5ns, CMOS, DIMM-168 |
| Parts packaging code | DIMM | DIMM | DIMM | DIMM |
| Contacts | 168 | 168 | 168 | 168 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
| Maximum access time | 6 ns | 6 ns | 7.5 ns | 7.5 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 code | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
| memory density | 301989888 bit | 150994944 bit | 150994944 bit | 301989888 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| memory width | 72 | 72 | 72 | 72 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 168 | 168 | 168 | 168 |
| word count | 4194304 words | 2097152 words | 2097152 words | 4194304 words |
| character code | 4000000 | 2000000 | 2000000 | 4000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 4MX72 | 2MX72 | 2MX72 | 4MX72 |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| self refresh | YES | YES | YES | YES |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Maker | Micron Technology | - | Micron Technology | Micron Technology |
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