IRG4CC40SBPBF datasheet, PDF - EEWORLD Datasheet

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IRG4CC40SBPBF: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER; CategoryDiscrete semiconductor The transistor; File Size122KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRG4CC40SBPBF Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER

IRG4CC40SBPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	WAFER
package instruction	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	STANDARD SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	O-XUUC-N
Number of components	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Base Number Matches	1

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PD- 91823

IRG4CC40SB

IRG4CC40SB IGBT Die in Wafer Form

C

G

E

600 V

Size 4

Standard Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V

CE (on)

V

(BR)CES

V

GE(th)

I

CES

I

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

4.5V Max.

600V Min.

3.0V Min.,6.0V Max.

250 µA Max.

± 1.1µA Max.

Test Conditions

I

C

= 10A, T

J

= 25°C, V

GE

= 15V

T

J

= 25°C, I

CES

= 250µA, V

GE

= 0V

V

GE

= V

CE

, T

J

=25°C, I

C

=250µA

T

J

= 25°C, V

CE

= 600V

T

J

= 25°C, V

GE

= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRG4PC40S

Cr-NiV-Ag ( 1kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

0.170" x 0.232"

150mm, with std. < 100 > flat

.015" + / -.003"

01-5219

100 Microns

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Die Outline

www.irf.com

12\4\98

IRG4CC40SBPBF Related Products

	IRG4CC40SBPBF
Description	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	WAFER
package instruction	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	STANDARD SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	O-XUUC-N
Number of components	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Base Number Matches	1

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