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K4T51043QG-HCF70

Description
DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Categorystorage    storage   
File Size536KB,26 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K4T51043QG-HCF70 Overview

DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60

K4T51043QG-HCF70 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
length9.5 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize128MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.008 A
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.5 mm
Base Number Matches1
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