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KM48V8104R-L6

Description
EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, PLASTIC, REVERSE, TSOP2-32
Categorystorage    storage   
File Size28KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KM48V8104R-L6 Overview

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, PLASTIC, REVERSE, TSOP2-32

KM48V8104R-L6 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2-R,
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G32
length20.95 mm
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2-R
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
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