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RD8.2ESAB3

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size61KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
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RD8.2ESAB3 Overview

Zener Diode,

RD8.2ESAB3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance20 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Maximum knee impedance120 Ω
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
GuidelineTS 16949
Nominal reference voltage8.24 V
Maximum reverse current0.5 µA
Reverse test voltage5 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.06%
Working test current5 mA
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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