UPA1728G-A datasheet, PDF - EEWORLD Datasheet

UPA1728G-A: DescriptionPower Field-Effect Transistor, 9A I(D), 60V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8; CategoryDiscrete semiconductor The transistor; File Size68KB，8 Pages; ManufacturerNEC Electronics

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UPA1728G-A Overview

Power Field-Effect Transistor, 9A I(D), 60V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PSSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	81 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.034 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G8
JESD-609 code	e6
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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