Silicon Controlled Rectifier, 2110A I(T)RMS, 3600V V(DRM), 2160V V(RRM), 1 Element
Parameter Name | Attribute value |
Maker | IXYS |
package instruction | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code | unknown |
Other features | FAST |
Nominal circuit commutation break time | 200 µs |
Configuration | SINGLE |
Critical rise rate of minimum off-state voltage | 50 V/us |
Maximum DC gate trigger current | 300 mA |
Maximum DC gate trigger voltage | 3 V |
JESD-30 code | O-CEDB-N2 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | DISK BUTTON |
Certification status | Not Qualified |
Maximum rms on-state current | 2110 A |
Maximum repetitive peak off-state leakage current | 100000 µA |
Off-state repetitive peak voltage | 3600 V |
Repeated peak reverse voltage | 2160 V |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | END |
Trigger device type | SCR |
Base Number Matches | 1 |