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AT49LV4096-12RJ

Description
Flash, 256KX16, 120ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44
Categorystorage    storage   
File Size381KB,13 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
Download Datasheet Parametric View All

AT49LV4096-12RJ Overview

Flash, 256KX16, 120ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44

AT49LV4096-12RJ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeSOIC
package instruction0.525 INCH, PLASTIC, SOIC-44
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time120 ns
JESD-30 codeR-PDSO-G44
JESD-609 codee3
length28.195 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height2.77 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
typeNOR TYPE
width13.34 mm
Base Number Matches1
Features
Low Voltage Operation
– 2.7V Read
– 5V Program/Erase
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 232K Words (464K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 10 µs/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
4-Megabit
(256K x 16)
3-volt Only
Flash Memory
AT49BV4096
AT49LV4096
Not Recommended
for New Design
Contact
Atmel to discuss
the latest design in trends
and options
Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
(continued)
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
VPP
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
Program/Erase Power Supply
Data Inputs/Outputs
No Connect
SOIC (SOP)
VPP
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
Rev. 0985B–10/98
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