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YA872C20R
(200V, 10A)
Ultra Low IR Schottky Barrier Diode
Features
• Ultra Low IR
• Low V
F
• Tj MAX = 175˚C
• High reliability at higher temperatures
FUJI Diode
Outline Drawings [mm]
TO-220AB
Connection diagram
YA872C20
YA872C20
Applications
• High frequency operation
• DC-DC converters
• AC adapter
Note:1 Country of origin mark.
"P" is Made in PHILIPPINES.
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
*Out put current of center tap full wave connection.
**Rating per element
Symbols
V
RRM
I
O
I
FSM
T
j
T
stg
Conditions
Ratings
200
Units
V
A
A
˚C
˚C
50Hz Square wave duty =1/2
Tc =157˚C
Sine wave, 10ms 1shot
10 *
125
175
-40 to +175
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Forward voltage***
Reverse current***
Thermal resistance
***Rating per element
Symbols
V
F
I
R
Rth(j-c)
Conditions
I
F
= 5 A
V
R
=V
RRM
Junction to case
Maximum
0.89
15
2
Units
V
µA
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
Ratings
0.3 to 0.5
2.0
Units
N•m
g
1
YA872C20R (200V, 10A)
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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