ADVANCED INFORMATION
Normally-OFF Trench Silicon
Carbide Power JFET
FEATURES:
Die Inside
• Hermetic TO-257 Packaging
• 200°C Maximum Operating Temperature (for 260
o
C Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Compatible with Standard Gate Driver ICs
• Positive Temperature Coefficient for Ease of Paralleling
• Extremely Fast Switching with No “Tail”
4
Current at 150°C
• 1200 Volt Drain-Source Blocking Voltage
• RDS
(on)max
of 0.100
Ω
• Voltage Controlled
• Low Gate Charge
• Low Intrinsic Capacitance
SiC JFET
ASJE1200R100
V
μJ
Product Summary
BV
DS
1200
RDS
(ON)max
E
TS,typ
0.100
170
D (2,4)
G (1)
APPLICATIONS:
• Satellite Solar Inverters
• Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
TO-257
123
S (3)
Internal Schematic
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
Continuous Drain Current
Pulsed Drain Current
(1)
Short Circuit Withstand Time
Power Dissipation
Gate Source Voltage
Operating and Storage Temperature
Symbol
I
D, Tj=125
I
D, Tj=175
I
DM
t
SC
P
D
V
GS
T
j
, T
j,stg
Conditions
T
j
= 125 °C
T
j
= 175 °C
T
c
= 25 °C
V
DD
< 800 V, T
C
< 125 °C
T
c
= 25 °C
AC
(2)
Value
17
12
30
50
136
15 to +15
55 to +200*
260
Unit
A
A
μS
W
V
o
o
C
C
T
sold
Lead Temperature for Soldering
1/8" from case < 10 s
(1) Limited by pulse width
(2) Rg
EXT
= 1 ohm, t
p
< 200ns, see Figure 5 for static conditions
* Contact Factory for 260
o
C
THERMAL CHARACTERISTICS
Value
Parameter
Thermal Resistance, junction to case
Thermal Resistance, junction to ambient
ASJE1200R100
Rev. 0.0 12/10
Symbol
R
th,JC
R
th,JA
Typ
Max
TBD
TBD
Unit
°C / W
For more products and
information, please visit our
website at www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
ADVANCED INFORMATION
SiC JFET
ASJE1200R100
Value
Typ
ELECTRICAL CHARACTERISTICS
Parameter
Off Characteristics
Drain Source Blocking Voltage
BV
DS
V
GS
= 0 V, I
D
= 600 A
V
DS
= 1200 V, V
GS
= 0 V, Tj = 25 C
V
DS
= 1200 V, V
GS
= 0 V, Tj = 175 C
V
DS
= 1200 V, V
GS
= 15 V,
Tj = 25
o
C
V
DS
= 1200 V, V
GS
= 15 V,
Tj = 175
o
C
V
GS
= 15 V, V
DS
= 0V
V
GS
= 15 V, V
DS
= 1200V
I
D
= 12 A, V
GS
= 3 V,
Tj = 25 °C
I
D
= 12 A, V
GS
= 3 V,
Tj = 125 °C
V
DS
= 1 V, I
D
= 34 mA
V
GS
= 3 V
f = 1 MHz, drain source shorted
V
GS
>2.7V; See Figure 5
o
o
Symbol
Conditions
Min
1200
Max
Unit
V
100
300
1
10
0.1
0.1
0.3
mA
600
1000
μA
Total Drain Leakage Current
I
DSS
Total Gate Reverse Leakage
On Characteristics
I
GSS
0.08
0.2
1.15
1.4
220
8
0.5
670
Drain Source On resistance
R
DS(on)
0.1
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Switching Characteristics
Turn On Delay
Rise Time
Turn Off Delay
Fall Time
Turn On Energy
Turn Off Energy
Total Switching Energy
Turn On Delay
Rise Time
Turn Off Delay
Fall Time
Turn On Energy
Turn Off Energy
Total Switching Energy
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
GS(th)
I
GFWD
R
G
R
G(on)
C
iss
C
oss
C
rss
C
o(er)
t
on
t
r
t
off
t
f
E
on
E
off
E
ts
t
on
t
r
t
off
t
f
E
on
E
off
E
ts
Q
g
Q
gs
Q
gd
1.75
V
mA
V
DD
= 100 V
V
DS
= 0 V to 480 V,
V
GS
= 0 V
103
97
60
pF
10
V
DS
= 600 V, I
D
= 12 A,
Inductive Load, T
J
= 25
o
C
Gate Driver = +15V, 10V,
Rg
EXT
= 5ohm
See Figure 15 for typical gate drive /
inductive load switching circuit.
12
30
25
70
100
170
10
V
DS
= 600 V, I
D
= 12 A,
Inductive Load, T
J
= 150
o
C
Gate Driver = +15V, 10V,
Rg
EXT
= 5ohm
See Figure 15 for typical gate drive /
inductive load switching circuit.
15
30
25
85
100
185
V
DS
= 600 V, I
D
= 10 A,
V
GS
= + 2.5 V
30
1
24
nC
μJ
ns
μJ
ns
ASJE1200R100
Rev. 0.0 12/10
Micross Components reserves the right to change products or specifications without notice.
2
ADVANCED INFORMATION
Figure 1. Typical Output Characteristics
I
D
= f(V
DS
); T
j
= 25 °C; parameter: V
GS
40
I
D
, Drain-Source Current (A)
I
D
, Drain-Source Current (A)
3.0 V
SiC JFET
ASJE1200R100
Figure 2. Typical Output Characteristics
I
D
= f(V
DS
); T
j
= 125 °C; parameter: V
GS
20
3.0 V
30
2.5 V
15
2.5 V
20
2.0 V
10
2.0 V
10
1.5 V
5
1.5 V
0
0
2
4
V
DS
, Drain-Source Voltage (V)
6
0
0
2
4
V
DS
, Drain-Source Voltage (V)
6
Figure 3. Typical Output Characteristics
I
D
= f(V
DS
); T
j
= 175°C; parameter: V
GS
15
I
D
, Drain-Source Current (A)
3.0 V
Figure 4. Typical Transfer Characteristics
I
D
= f(V
GS
); V
DS
= 5V
40
I
D
, Drain-Source Current (A)
35
30
25
20
15
10
5
0
12
2.5 V
9
6
2.0 V
3
0
0
1
2
3
4
5
1.5 V
6
0.00
0.50
1.00
1.50
2.00
2.50
3.00
V
DS
, Drain-Source Voltage (V)
V
GS
, Gate-Source Voltage (V)
Figure 5. Gate-Source Current
I
GS
= f(V
GS
); parameter: T
j
0.50
I
GS
, Gate-Source Current (A)
8
Figure 6. Drain-Source On-resistance
R
DS(on)
= f(I
D
); V
GS
= 3.0; parameter: T
j
R
DS(on)
, Drain-Source On-resistance
( )
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
20
I
D
, Drain Current (A)
Micross Components reserves the right to change products or specifications without notice.
0.40
0.30
0.20
0.10
0.00
1.5
6
4
2
0
2
3
175 C
o
150
o
C
25
o
C
175
o
C
4
5
6
125
o
C
25
o
C
25
o
C
2.0
2.5
3.0
V
GS
, Gate-Source Voltage (V)
ASJE1200R100
Rev. 0.0 12/10
3
ADVANCED INFORMATION
Figure 7. Drain-Source On-resistance
R
DS(ON)
= f(T
j
); parameter: I
GS
R
DS(on)
, Drain-Source On-resistance ( )
SiC JFET
ASJE1200R100
Figure 8. Drain-Source On-resistance
R
DS(ON)
= f(I
GS
); T
j
= 25
o
C
R
DS(on)
, Drain-Source On-resistance ( )
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
50
100
150
200
C)
T
j
, Junction Temperature (°
0.094
0.092
0.090
0.088
0.086
0.084
0.082
0.080
0.078
0.076
0.1
1.0
10.0
100.0
1000.0
I
GS
, Gate-Source Current (mA)
100mA
500mA
Figure 9. Typical Capacitance
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
1.E+04
Figure 10. Gate Charge
Q
g
= f(V
GS
); V
DS
= 600V; I
D
= 5A, T
j
= 25
o
C
3.0
V
GS
, Gate-Source Voltage (V)
1200
2.5
2.0
1.5
1.0
0.5
0.0
C, Capacitance (pF)
1.E+03
C
iss
1.E+02
C
rss
1.E+01
C
oss
1.E+00
0
300
600
900
0
10
20
30
V
DS
, Drain-Source Voltage (V)
Q
g
, Total Gate Charge (nC)
Figure 11. Gate Threshold Voltage
V
th
= f(T
j
)
1.50
V
TH
, Gate Threshold Voltage (V)
-1.5mV/
o
C
I
D
, Drain Leakage Current (A)
Figure 12. Drain-Source Leakage
I
D
= f(V
DS
); V
GS
= 0V; parameter: T
j
1E-03
175
o
C
1E-04
1E-05
1.25
Max
125
o
C
1E-06
1E-07
1E-08
1E-09
1.00
Typical
0.75
25
o
C
0.50
0
ASJE1200R100
Rev. 0.0 12/10
50
100
150
200
0
300
600
900
1200
T
j
, Junction Temperature (
o
C)
BV
DS
, Drain-Source Blocking Voltage (V)
Micross Components reserves the right to change products or specifications without notice.
4
ADVANCED INFORMATION
Figure 13. Switching Energy Losses
E
s
= f(I
D
); V
DS
= 600V; V
GD
= +15V/-10V, R
GEXT
= 5ohm
300
E, Switching Energy (uJ)
250
200
150
100
50
0
2
6
10
I
D
, Drain Current (A)
14
18
E
OFF
Tj = 25
o
C
Tj = 150
o
C
SiC JFET
ASJE1200R100
Figure 14. Switching Energy Losses
Es = f(R
GEXT
); V
DS
= 600V; I
D
= 12A, V
GD
= +15V/-10V
600
Tj = 25
o
C
Tj = 150
o
C
E
TS
E, Switching Energy (uJ)
500
400
300
200
100
0
0
E
TS
E
OFF
E
ON
E
ON
10
20
30
40
Rg
EXT
, External Gate Resistance, ( )
Figure 15. Inductive Load Switching Circuit
Figure 18. Transient Thermal Impedance
Z
th(jc)
= f(t
P
); parameter: Duty Ratio
1.E+01
Z
th(jc)
, Transient Thermal Impedance
(°
C/W)
1.E+00
0.5
0.3
1.E-01
0.1
0.05
0.02
0.01
1.E-02
single
1.E-03
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
t
P
, Pulse Width (s)
ASJE1200R100
Rev. 0.0 12/10
Micross Components reserves the right to change products or specifications without notice.
5
京公网安备 11010802033920号
EEWORLD
