V58C2256404SBLF6 datasheet, PDF

V58C2256404SBLF6: DescriptionDDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, LEAD FREE, MO-233, FBGA-60; Categorystorage storage; File Size983KB，62 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V58C2256404SBLF6 Overview

DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, LEAD FREE, MO-233, FBGA-60

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ProMOS Technologies Inc
Parts packaging code	BGA
package instruction	TBGA, BGA60,9X12,40/32
Contacts	60
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
length	13 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm
Base Number Matches	1

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