Stanford Microdevices SCA-3 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance
up to 5GHz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products. Typical IP3 at 850 MHz with 65mA is
32.8 dBm.
These unconditionally stable amplifiers provide 13.7 dB of gain
and 17.3 dBm of 1dB compressed power and require only a
single positive voltage supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation. This MMIC is an ideal choice for wireless applica-
tions such as cellular, PCS, CDPD, wireless data and SONET.
16
15
14
Small Signal Gain vs. Frequency @ I
D
=65mA
SCA-3
Preliminary
Preliminary
DC-5 GHz, Cascadable
GaAs HBT MMIC Amplifier
NGA-489 Recommended for New Designs
dB
13
12
11
10
0
1
2
3
4
5
6
Product Features
High Output IP3: 32.8 dBm @ 850 MHz
Cascadable 50 Ohm Gain Block
Patented GaAs HBT Technology
Operates From Single Supply
Applications
Cellular, PCS, CDPD, Wireless Data, SONET
Units
Min.
Ty p.
17.3
17.6
17.4
29.8
32.8
30.3
29.1
13.7
13.6
13.6
5000
1.7:1
1.5:1
18.3
18.4
18.4
5.6
4.4
4.9
224
5.4
Max.
Frequency (GHz)
Electrical Specifications
Sy mbol
Parameters: Test Conditions:
GHz
Z
0
= 50 Ohms, I
D
= 65mA, T = 25°C
Output Pow er at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
P
1dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
IP
3
Third Order Intercept Point
Pow er out per tone = 0 dBm
S
21
Bandw idth
S
11
S
22
S
12
NF
V
D
Rth,j-l
Small Signal Gain
(Determined by S
11
, S
22
Values)
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Voltage
Thermal Resistance (junction - lead)
12.3
f = DC-5000 MHz
f = DC-5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 1950 MHz
-
-
dB
dB
dB
dB
V
o
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101392 Rev A
Preliminary
Preliminary
SCA-3 DC-5GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Operation of this device above any one of these parameters
may cause permanent damage.
Bias Conditions should also satisfy the following expression:
I
D
V
D
(max) < (T
J
- T
OP
)/Rth, j-l
Parameter
Supply Current
Operating Temperature
M aximum Input Pow er
Storage Temperature Range
Operating Junction Temperature
Value
120
-40 to +85
+16
-40 to +150
+175
Unit
mA
C
dBm
C
C
Parameter
500 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
850 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
1950 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
2400 MH z
Gai n
Output IP3
Output P1dB
Input Return Loss
Isolati on
Ty pical
25°C
13.7
5.4
32.3
17.1
12.8
18.2
13.7
5.5
32.8
17.3
12.3
18.3
13.6
5.6
30.3
17.6
12.9
18.2
13.6
29.1
17.4
15.2
18.4
U nit
Test C ondition
(I
D
= 65 mA, unless otherwise noted)
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
*NOTE:
While the SCA-3 can be operated at different bias currents, 65 mA is the recommended
bias for lower junction temperature and longer life. This reflects typical operating conditions
which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF
is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85°C ambient
temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101392 Rev A
Preliminary
Preliminary
SCA-3 DC-5GHz Cascadable MMIC Amplifier
Junction Temp vs. Dissipated Power
250
MTTF vs. Dissipated Power
1.E+07
Device Lead Temp = +85C
Junction Temperature (°C)
Device Lead Temp = +85 C
230
1.E+06
210
190
+175C
170
150
0.35
Pdiss (W)
Output IP3 vs. I
D
vs. Frequency
0.45
0.55
MTTF (hrs)
1.E+05
1.E+04
1.E+03
0.35
Pdiss (W)
Output P1dB vs. I
D
vs. Frequency
0.45
0.55
40
IP3_65mA
IP3_80mA
20
P1dB_65mA
19
dBm
P1dB_80mA
P1dB_100mA
35
dBm
IP3_100mA
18
17
16
30
25
0.5
1.5
GHz
15
2.5
3.5
0.5
1.5
GHz
2.5
3.5
NF vs. I
D
vs. Frequency
6 .5
15
Small Signal Gain vs. I
D
vs. Frequency
G_65mA
G_80mA
G_100mA
6
dB
dB
N F_65m A
N F_80m A
NF_100mA
14
5 .5
13
5
0.5
1
GHz
1 .5
2
12
0.5
1.5
GHz
2.5
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101392 Rev A
Preliminary
Preliminary
SCA-3 DC-5GHz Cascadable MMIC Amplifier
Pin #
1
2
3
Function
RF IN
GND
RF OUT/Vcc
Description
RF input pin. This pin requires the use of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead
inductance. Place vias as close to ground leads as possible.
RF output and bias pin. Bias should be supplied to this pin through an external
series resistor and RF choke inductor. Because DC biasing is present on this
pin, a DC blocking capacitor should be used in most applications (see
application schematic). The supply side of the bias netw ork should be w ell
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